Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates

G. Song, M. Y. Ali, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In back-contact solar cells, the emitter is conventionally formed by diffusion of a n-type dopant into a p-type substrate. We demonstrate a back-contact solar cell without diffusion. The p-n junction in our cell is formed by the record-high Schottky barrier of 1.1 eV between low work-function aluminum and sulfur-passivated p-type Si(100) surface. The high Schottky barrier induces degenerate inversion on the surface of p-type Si, leading to the formation of a p-n junction without diffusion. The sulfur passivation process is performed by immersing the Si substrate in an aqueous solution containing ammonium sulfide. Although the conversion efficiency is low in this cell (∼1%), it can be significantly increased by employing a chemical vapor deposition process for passivation and by optimizing several material/device parameters.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

Fingerprint

Solar cells
Passivation
Substrates
Sulfur
Conversion efficiency
Chemical vapor deposition
Doping (additives)
Aluminum
Sulfides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Song, G., Ali, M. Y., & Tao, M. (2008). Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922447] https://doi.org/10.1109/PVSC.2008.4922447

Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates. / Song, G.; Ali, M. Y.; Tao, Meng.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922447.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Song, G, Ali, MY & Tao, M 2008, Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922447, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922447
Song G, Ali MY, Tao M. Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922447 https://doi.org/10.1109/PVSC.2008.4922447
Song, G. ; Ali, M. Y. ; Tao, Meng. / Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates. Conference Record of the IEEE Photovoltaic Specialists Conference. 2008.
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