Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates

G. Song, M. Y. Ali, M. Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In back-contact solar cells, the emitter is conventionally formed by diffusion of a n-type dopant into a p-type substrate. We demonstrate a back-contact solar cell without diffusion. The p-n junction in our cell is formed by the record-high Schottky barrier of 1.1 eV between low work-function aluminum and sulfur-passivated p-type Si(100) surface. The high Schottky barrier induces degenerate inversion on the surface of p-type Si, leading to the formation of a p-n junction without diffusion. The sulfur passivation process is performed by immersing the Si substrate in an aqueous solution containing ammonium sulfide. Although the conversion efficiency is low in this cell (∼1%), it can be significantly increased by employing a chemical vapor deposition process for passivation and by optimizing several material/device parameters.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
StatePublished - Dec 1 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Song, G., Ali, M. Y., & Tao, M. (2008). Diffusion-free back-contact solar cells on S-passivated p-type Si(100) substrates. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922447] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922447