Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices

D. Zuo, R. Liu, J. Mabon, Z. Y. He, S. Liu, Yong-Hang Zhang, E. A. Kadlec, B. Olson, E. A. Shaner, D. Wasserman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
Country/TerritoryUnited States
CitySan Jose
Period5/10/155/15/15

Keywords

  • Current measurement
  • Electron beams
  • Optical variables measurement
  • Performance evaluation
  • Photoluminescence
  • Spontaneous emission
  • Superlattices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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