Abstract
We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2015-August |
| ISBN (Print) | 9781557529688 |
| State | Published - Aug 10 2015 |
| Event | Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: May 10 2015 → May 15 2015 |
Other
| Other | Conference on Lasers and Electro-Optics, CLEO 2015 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 5/10/15 → 5/15/15 |
Keywords
- Current measurement
- Electron beams
- Optical variables measurement
- Performance evaluation
- Photoluminescence
- Spontaneous emission
- Superlattices
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
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Zuo, D., Liu, R., Mabon, J., He, Z. Y., Liu, S., Zhang, Y-H., Kadlec, E. A., Olson, B., Shaner, E. A., & Wasserman, D. (2015). Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2015-August). [7183848] Institute of Electrical and Electronics Engineers Inc..