Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices

D. Zuo; R. Liu; J. Mabon; Z. Y. He; S. Liu; Yong-Hang Zhang; E. A. Kadlec; B. Olson; E. A. Shaner; D. Wasserman

Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices

D. Zuo, R. Liu, J. Mabon, Z. Y. He, S. Liu, Yong-Hang Zhang, E. A. Kadlec, B. Olson, E. A. Shaner, D. Wasserman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2015-August
ISBN (Print)	9781557529688
State	Published - Aug 10 2015
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: May 10 2015 → May 15 2015

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	5/10/15 → 5/15/15

Keywords

Current measurement
Electron beams
Optical variables measurement
Performance evaluation
Photoluminescence
Spontaneous emission
Superlattices

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

Zuo, D., Liu, R., Mabon, J., He, Z. Y., Liu, S., Zhang, Y-H., Kadlec, E. A., Olson, B., Shaner, E. A., & Wasserman, D. (2015). Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2015-August). [7183848] Institute of Electrical and Electronics Engineers Inc..

Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices. / Zuo, D.; Liu, R.; Mabon, J. et al.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. 7183848.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zuo, D, Liu, R, Mabon, J, He, ZY, Liu, S, Zhang, Y-H, Kadlec, EA, Olson, B, Shaner, EA & Wasserman, D 2015, Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices. in Conference on Lasers and Electro-Optics Europe - Technical Digest. vol. 2015-August, 7183848, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 5/10/15.

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title = "Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices",

abstract = "We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.",

keywords = "Current measurement, Electron beams, Optical variables measurement, Performance evaluation, Photoluminescence, Spontaneous emission, Superlattices",

author = "D. Zuo and R. Liu and J. Mabon and He, {Z. Y.} and S. Liu and Yong-Hang Zhang and Kadlec, {E. A.} and B. Olson and Shaner, {E. A.} and D. Wasserman",

year = "2015",

month = aug,

day = "10",

language = "English (US)",

isbn = "9781557529688",

volume = "2015-August",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Conference on Lasers and Electro-Optics, CLEO 2015 ; Conference date: 10-05-2015 Through 15-05-2015",

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T1 - Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices

AU - Zuo, D.

AU - Liu, R.

AU - Mabon, J.

AU - He, Z. Y.

AU - Liu, S.

AU - Zhang, Yong-Hang

AU - Kadlec, E. A.

AU - Olson, B.

AU - Shaner, E. A.

AU - Wasserman, D.

PY - 2015/8/10

Y1 - 2015/8/10

N2 - We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.

AB - We present the characterization of minority carrier diffusion length and surface recombination velocity, as well as vertical diffusivity and mobility by performing an electron beam induced current measurement in addition to an optical lifetime measurement.

KW - Current measurement

KW - Electron beams

KW - Optical variables measurement

KW - Performance evaluation

KW - Photoluminescence

KW - Spontaneous emission

KW - Superlattices

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UR - http://www.scopus.com/inward/citedby.url?scp=84954064965&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84954064965

SN - 9781557529688

VL - 2015-August

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Lasers and Electro-Optics, CLEO 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices

Abstract

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Keywords

ASJC Scopus subject areas

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