Diffuse optical reflectivity measurements on GaAs during molecular-beam epitaxy processing

C. Lavoie, Shane Johnson, J. A. Mackenzie, T. Tiedje, T. van Buuren

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In situ measurements of the diffuse and specular reflectivity of GaAs substrates in molecular-beam epitaxy show that the GaAs surface roughens during thermal desorption of the oxide and smooths during the growth of a buffer layer. The diffuse reflectivity increases abruptly over a temperature interval smaller than 0.4 °C as the oxide desorbs. This provides a convenient optical signature for determining when the substrate is clean. The oxide desorption temperature and the amount of surface roughening both increase with the thickness of the oxide. The decrease in the diffuse reflectivity during the growth of the buffer layer is not monotonic, showing instead an oscillatory behavior.

Original languageEnglish (US)
Pages (from-to)930-933
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume10
Issue number4
DOIs
StatePublished - Jan 1 1992
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Oxides
molecular beam epitaxy
reflectance
oxides
Buffer layers
Processing
buffers
desorption
Thermal desorption
Substrates
in situ measurement
Desorption
signatures
intervals
Temperature
temperature
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Diffuse optical reflectivity measurements on GaAs during molecular-beam epitaxy processing. / Lavoie, C.; Johnson, Shane; Mackenzie, J. A.; Tiedje, T.; van Buuren, T.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 10, No. 4, 01.01.1992, p. 930-933.

Research output: Contribution to journalArticle

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