Diffraction microscopy for disordered tetrahedral networks

Ju Yin Cheng, Michael Treacy, P. J. Keblinski, J. M. Gibson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The amorphous structures of silica, silicon, and germanium were studied. Using transmission electron microscopy, the diffraction intensity and associated fluctuations in both reciprocal and real spaces were obtained. An orientational variance in diffuse reflections was also computed in order to observe the medium range order of the structures. Using fluctuation microscopy, it was found that amorphous germanium showed a slightly disordered structure compared to amorphous silicon.

Original languageEnglish (US)
Pages (from-to)7779-7784
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
StatePublished - Jun 15 2004

Fingerprint

germanium
microscopy
diffraction
amorphous silicon
silicon dioxide
transmission electron microscopy
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Diffraction microscopy for disordered tetrahedral networks. / Cheng, Ju Yin; Treacy, Michael; Keblinski, P. J.; Gibson, J. M.

In: Journal of Applied Physics, Vol. 95, No. 12, 15.06.2004, p. 7779-7784.

Research output: Contribution to journalArticle

Cheng, Ju Yin ; Treacy, Michael ; Keblinski, P. J. ; Gibson, J. M. / Diffraction microscopy for disordered tetrahedral networks. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 12. pp. 7779-7784.
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