Difficulties in characterizing high-resistivity silicon

P. Nayak, Ranko Richert, D. K. Schroder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-resistivity silicon (HRS) plays an important role in modern telecommunication IC chips and HR Czochralski (CZ) crystals are gaining more importance. During our study of CZ-HRS wafers, both bulk and Silicon-On-Insulator (SOI), we observed it is not easy to use traditional characterization techniques such as capacitance-voltage (C-V) or resistivity measurement techniques on HRS. During C-V measurements using a Schottky contact directly on HRSOI film we observed a bias spreading effect, where the capacitance was much higher than that due to the gate area. Effects of various factors such as frequency, contact size, light, temperature, and annealing are discussed. The challenges in accurate resistivity measurement using four-point probe, Hall method, and C-V profile are highlighted and a new approach using Impedance Spectroscopy to extract resistivity is discussed.

Original languageEnglish (US)
Title of host publicationHigh Purity Silicon 12
Pages259-268
Number of pages10
Edition5
DOIs
StatePublished - Dec 1 2012
Event12th High Purity Silicon Symposium - 222nd ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 11 2012

Publication series

NameECS Transactions
Number5
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other12th High Purity Silicon Symposium - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/11/12

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Nayak, P., Richert, R., & Schroder, D. K. (2012). Difficulties in characterizing high-resistivity silicon. In High Purity Silicon 12 (5 ed., pp. 259-268). (ECS Transactions; Vol. 50, No. 5). https://doi.org/10.1149/05005.0259ecst