Different DC response in thickness and lateral field excitation film bulk acoustic resonators

Xiaotun Qiu, Hongyu Yu

Research output: Contribution to journalArticle

Abstract

This paper describes different DC response in Thickness Field Excitation (TFE) and Lateral Field Excitation (LFE) Film Bulk Acoustic Resonators (FBAR). As DC voltage was applied to TFE FBAR, the resonant frequency shifted linearly with a sensitivity of -4.5 ppm/V. This DC response was independent of temperature (from room temperature to 80 °C). On the other hand, DC voltage did not have an apparent impact on the quality factor (Q). In the case of LFE FBAR, DC voltage cannot alter the resonant frequency. However, an enhanced Q was observed with increasing voltage. This was a result of the acoustoelectric amplification effect due to the lower acoustic velocity in LFE FBAR.

Original languageEnglish (US)
Pages (from-to)111-114
Number of pages4
JournalMicro and Nanosystems
Volume3
Issue number2
StatePublished - Jul 2011

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Acoustic resonators
Electric potential
Natural frequencies
Acoustic wave velocity
Amplification
Temperature

Keywords

  • DC voltage
  • Film bulk acoustic resonator
  • Lateral field excitation
  • Thickness field excitation

ASJC Scopus subject areas

  • Building and Construction

Cite this

Different DC response in thickness and lateral field excitation film bulk acoustic resonators. / Qiu, Xiaotun; Yu, Hongyu.

In: Micro and Nanosystems, Vol. 3, No. 2, 07.2011, p. 111-114.

Research output: Contribution to journalArticle

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