Diamond p-i-n-nanoC diodes for electron emitters

Franz A. Koeck; Manpuneet Benipal; Harshad Surdi; Robert J. Nemanich

doi:10.1109/IVEC45766.2020.9520600

Diamond p-i-n-nanoC diodes for electron emitters

Franz A. Koeck, Manpuneet Benipal, Harshad Surdi, Robert J. Nemanich

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electron emitters are widely deployed in traveling wavetubes (TWTs) for communications, radar applications, and scientific apparatus like free electron lasers. These instruments typically utilize cathodes that release an electron current through application of thermal energy or high electric fields. A novel electron emitter approach exploits the negative electron affinity surface of diamond in a modified semiconductor p-i-n diode. Under a forward bias electrons are injected into the conduction band of the diamond diode and a fraction are emitted into vacuum. Electron emission occurs at room temperature and low electric fields. We have prepared a modified diamond p-i-n diode that included a highly conducting nanostructured carbon (nanoC) contact layer utilizing plasma-enhanced chemical vapor deposition (PECVD) on a single crystal boron doped substrate. Emitter devices with various geometries were then fabricated using photo-lithography. After a hydrogen passivation step individual devices were characterized in vacuum. Under a forward bias the p-i-n-nanoC diodes displayed light emission indicative of bipolar transport. With a typical diode current of 0.1A an electron emission current approaching 0.4mA was measured from a single device sized 1.2mm x 0.2mm.

Original language	English (US)
Title of host publication	2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	17-18
Number of pages	2
ISBN (Electronic)	9781538682883
DOIs	https://doi.org/10.1109/IVEC45766.2020.9520600
State	Published - Oct 19 2020
Event	21st IEEE International Conference on Vacuum Electronics, IVEC 2020 - Monterey, United States Duration: Oct 19 2020 → Oct 22 2020

Publication series

Name	2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020

Conference

Conference	21st IEEE International Conference on Vacuum Electronics, IVEC 2020
Country/Territory	United States
City	Monterey
Period	10/19/20 → 10/22/20

Keywords

Diamond
Doping
Electron emission
Electronic material
Plasma-enhanced chemical vapor deposition

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/IVEC45766.2020.9520600

Cite this

Koeck, F. A., Benipal, M., Surdi, H., & Nemanich, R. J. (2020). Diamond p-i-n-nanoC diodes for electron emitters. In 2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020 (pp. 17-18). (2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVEC45766.2020.9520600

Diamond p-i-n-nanoC diodes for electron emitters. / Koeck, Franz A.; Benipal, Manpuneet; Surdi, Harshad et al.
2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 17-18 (2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koeck, FA, Benipal, M, Surdi, H & Nemanich, RJ 2020, Diamond p-i-n-nanoC diodes for electron emitters. in 2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020. 2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020, Institute of Electrical and Electronics Engineers Inc., pp. 17-18, 21st IEEE International Conference on Vacuum Electronics, IVEC 2020, Monterey, United States, 10/19/20. https://doi.org/10.1109/IVEC45766.2020.9520600

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abstract = "Electron emitters are widely deployed in traveling wavetubes (TWTs) for communications, radar applications, and scientific apparatus like free electron lasers. These instruments typically utilize cathodes that release an electron current through application of thermal energy or high electric fields. A novel electron emitter approach exploits the negative electron affinity surface of diamond in a modified semiconductor p-i-n diode. Under a forward bias electrons are injected into the conduction band of the diamond diode and a fraction are emitted into vacuum. Electron emission occurs at room temperature and low electric fields. We have prepared a modified diamond p-i-n diode that included a highly conducting nanostructured carbon (nanoC) contact layer utilizing plasma-enhanced chemical vapor deposition (PECVD) on a single crystal boron doped substrate. Emitter devices with various geometries were then fabricated using photo-lithography. After a hydrogen passivation step individual devices were characterized in vacuum. Under a forward bias the p-i-n-nanoC diodes displayed light emission indicative of bipolar transport. With a typical diode current of 0.1A an electron emission current approaching 0.4mA was measured from a single device sized 1.2mm x 0.2mm. ",

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AB - Electron emitters are widely deployed in traveling wavetubes (TWTs) for communications, radar applications, and scientific apparatus like free electron lasers. These instruments typically utilize cathodes that release an electron current through application of thermal energy or high electric fields. A novel electron emitter approach exploits the negative electron affinity surface of diamond in a modified semiconductor p-i-n diode. Under a forward bias electrons are injected into the conduction band of the diamond diode and a fraction are emitted into vacuum. Electron emission occurs at room temperature and low electric fields. We have prepared a modified diamond p-i-n diode that included a highly conducting nanostructured carbon (nanoC) contact layer utilizing plasma-enhanced chemical vapor deposition (PECVD) on a single crystal boron doped substrate. Emitter devices with various geometries were then fabricated using photo-lithography. After a hydrogen passivation step individual devices were characterized in vacuum. Under a forward bias the p-i-n-nanoC diodes displayed light emission indicative of bipolar transport. With a typical diode current of 0.1A an electron emission current approaching 0.4mA was measured from a single device sized 1.2mm x 0.2mm.

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Diamond p-i-n-nanoC diodes for electron emitters

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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