Diagnosing bias runaway in analog/mixed signal circuits

Ketul B. Sutaria, Pengpeng Ren, Athul Ramkumar, Rongjun Zhu, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The degradation of IC reliability is usually a gradual process. However, under some specific circumstance, the degradation rate can be dramatically accelerated, leading to a destructive result. Bias runaway, referring to the rapid increase of the bias voltage in analog/mixed signal (AMS) circuits, is such a case. It occurs when the feedback between the bias current and the effect of channel hot carrier (CHC) turns into positive and thus, uncontrollable. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, this paper (1) investigates the critical condition that triggers bias runaway, and the impact of gate length tuning, (2) develops compact models and the simulation methodology for circuit diagnosis, and (3) proposes design solutions and the trade-offs to avoid bias runaway. Overall, this work identifies a key issue to the stability of bias generation circuits, which is vitally important to reliable AMS designs.

Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933167
DOIs
StatePublished - 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: Jun 1 2014Jun 5 2014

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period6/1/146/5/14

Fingerprint

Networks (circuits)
Degradation
Hot carriers
Bias currents
Bias voltage
Transistors
Tuning
Feedback
Silicon

Keywords

  • Analog and Mixed Signal aging
  • Bias Runaway
  • CHC
  • Simulation Methodology

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sutaria, K. B., Ren, P., Ramkumar, A., Zhu, R., Feng, X., Wang, R., ... Cao, Y. (2014). Diagnosing bias runaway in analog/mixed signal circuits. In IEEE International Reliability Physics Symposium Proceedings [6860595] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6860595

Diagnosing bias runaway in analog/mixed signal circuits. / Sutaria, Ketul B.; Ren, Pengpeng; Ramkumar, Athul; Zhu, Rongjun; Feng, Xixiang; Wang, Runsheng; Huang, Ru; Cao, Yu.

IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. 6860595.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sutaria, KB, Ren, P, Ramkumar, A, Zhu, R, Feng, X, Wang, R, Huang, R & Cao, Y 2014, Diagnosing bias runaway in analog/mixed signal circuits. in IEEE International Reliability Physics Symposium Proceedings., 6860595, Institute of Electrical and Electronics Engineers Inc., 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 6/1/14. https://doi.org/10.1109/IRPS.2014.6860595
Sutaria KB, Ren P, Ramkumar A, Zhu R, Feng X, Wang R et al. Diagnosing bias runaway in analog/mixed signal circuits. In IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. 6860595 https://doi.org/10.1109/IRPS.2014.6860595
Sutaria, Ketul B. ; Ren, Pengpeng ; Ramkumar, Athul ; Zhu, Rongjun ; Feng, Xixiang ; Wang, Runsheng ; Huang, Ru ; Cao, Yu. / Diagnosing bias runaway in analog/mixed signal circuits. IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014.
@inproceedings{bad4b9d94b6b4e60867d6f018183fbc5,
title = "Diagnosing bias runaway in analog/mixed signal circuits",
abstract = "The degradation of IC reliability is usually a gradual process. However, under some specific circumstance, the degradation rate can be dramatically accelerated, leading to a destructive result. Bias runaway, referring to the rapid increase of the bias voltage in analog/mixed signal (AMS) circuits, is such a case. It occurs when the feedback between the bias current and the effect of channel hot carrier (CHC) turns into positive and thus, uncontrollable. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, this paper (1) investigates the critical condition that triggers bias runaway, and the impact of gate length tuning, (2) develops compact models and the simulation methodology for circuit diagnosis, and (3) proposes design solutions and the trade-offs to avoid bias runaway. Overall, this work identifies a key issue to the stability of bias generation circuits, which is vitally important to reliable AMS designs.",
keywords = "Analog and Mixed Signal aging, Bias Runaway, CHC, Simulation Methodology",
author = "Sutaria, {Ketul B.} and Pengpeng Ren and Athul Ramkumar and Rongjun Zhu and Xixiang Feng and Runsheng Wang and Ru Huang and Yu Cao",
year = "2014",
doi = "10.1109/IRPS.2014.6860595",
language = "English (US)",
isbn = "9781479933167",
booktitle = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Diagnosing bias runaway in analog/mixed signal circuits

AU - Sutaria, Ketul B.

AU - Ren, Pengpeng

AU - Ramkumar, Athul

AU - Zhu, Rongjun

AU - Feng, Xixiang

AU - Wang, Runsheng

AU - Huang, Ru

AU - Cao, Yu

PY - 2014

Y1 - 2014

N2 - The degradation of IC reliability is usually a gradual process. However, under some specific circumstance, the degradation rate can be dramatically accelerated, leading to a destructive result. Bias runaway, referring to the rapid increase of the bias voltage in analog/mixed signal (AMS) circuits, is such a case. It occurs when the feedback between the bias current and the effect of channel hot carrier (CHC) turns into positive and thus, uncontrollable. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, this paper (1) investigates the critical condition that triggers bias runaway, and the impact of gate length tuning, (2) develops compact models and the simulation methodology for circuit diagnosis, and (3) proposes design solutions and the trade-offs to avoid bias runaway. Overall, this work identifies a key issue to the stability of bias generation circuits, which is vitally important to reliable AMS designs.

AB - The degradation of IC reliability is usually a gradual process. However, under some specific circumstance, the degradation rate can be dramatically accelerated, leading to a destructive result. Bias runaway, referring to the rapid increase of the bias voltage in analog/mixed signal (AMS) circuits, is such a case. It occurs when the feedback between the bias current and the effect of channel hot carrier (CHC) turns into positive and thus, uncontrollable. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, this paper (1) investigates the critical condition that triggers bias runaway, and the impact of gate length tuning, (2) develops compact models and the simulation methodology for circuit diagnosis, and (3) proposes design solutions and the trade-offs to avoid bias runaway. Overall, this work identifies a key issue to the stability of bias generation circuits, which is vitally important to reliable AMS designs.

KW - Analog and Mixed Signal aging

KW - Bias Runaway

KW - CHC

KW - Simulation Methodology

UR - http://www.scopus.com/inward/record.url?scp=84905667144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905667144&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2014.6860595

DO - 10.1109/IRPS.2014.6860595

M3 - Conference contribution

SN - 9781479933167

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -