Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Steven P. Denbaars; Daniel Feezell; Katheryn Kelchner; Siddha Pimputkar; Chi Chen Pan; Chia Chen Yen; Shinichi Tanaka; Yuji Zhao; Nathan Pfaff; Robert Farrell; Mike Iza; Stacia Keller; Umesh Mishra; James S. Speck; Shuji Nakamura

doi:10.1016/j.actamat.2012.10.042

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Steven P. Denbaars, Daniel Feezell, Katheryn Kelchner, Siddha Pimputkar, Chi Chen Pan, Chia Chen Yen, Shinichi Tanaka, Yuji Zhao, Nathan Pfaff, Robert Farrell, Mike Iza, Stacia Keller, Umesh Mishra, James S. Speck, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

355 Scopus citations

Abstract

Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm W^-1, and external quantum efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies, such as incandescent and compact fluorescent (CFL) lighting. Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. The emphasis on nonpolar and semipolar LEDs highlights high-power violet and blue emitters, and we consider the effects of indium incorporation and well width. Semipolar GaN materials have enabled the development of high-efficiency LEDs in the blue region and recent achievements of green laser diodes at 520 nm.

Original language	English (US)
Pages (from-to)	945-951
Number of pages	7
Journal	Acta Materialia
Volume	61
Issue number	3
DOIs	https://doi.org/10.1016/j.actamat.2012.10.042
State	Published - Feb 2013
Externally published	Yes

Keywords

GaN
LEDs
Laser diodes
Solid-state lighting

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

Access to Document

10.1016/j.actamat.2012.10.042

Cite this

Denbaars, S. P., Feezell, D., Kelchner, K., Pimputkar, S., Pan, C. C., Yen, C. C., Tanaka, S., Zhao, Y., Pfaff, N., Farrell, R., Iza, M., Keller, S., Mishra, U., Speck, J. S., & Nakamura, S. (2013). Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Materialia, 61(3), 945-951. https://doi.org/10.1016/j.actamat.2012.10.042

Denbaars, SP, Feezell, D, Kelchner, K, Pimputkar, S, Pan, CC, Yen, CC, Tanaka, S, Zhao, Y, Pfaff, N, Farrell, R, Iza, M, Keller, S, Mishra, U, Speck, JS & Nakamura, S 2013, 'Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays', Acta Materialia, vol. 61, no. 3, pp. 945-951. https://doi.org/10.1016/j.actamat.2012.10.042

@article{71a94fd8453e4c4d98aa0318b778d30d,

title = "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays",

abstract = "Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm W-1, and external quantum efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies, such as incandescent and compact fluorescent (CFL) lighting. Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. The emphasis on nonpolar and semipolar LEDs highlights high-power violet and blue emitters, and we consider the effects of indium incorporation and well width. Semipolar GaN materials have enabled the development of high-efficiency LEDs in the blue region and recent achievements of green laser diodes at 520 nm.",

keywords = "GaN, LEDs, Laser diodes, Solid-state lighting",

author = "Denbaars, {Steven P.} and Daniel Feezell and Katheryn Kelchner and Siddha Pimputkar and Pan, {Chi Chen} and Yen, {Chia Chen} and Shinichi Tanaka and Yuji Zhao and Nathan Pfaff and Robert Farrell and Mike Iza and Stacia Keller and Umesh Mishra and Speck, {James S.} and Shuji Nakamura",

note = "Funding Information: The authors would like to thank Mitsubishi Chemical Corporation for the supply of bulk GaN substrates. The authors acknowledge the Solid State Lighting and Energy Center (SSLEC) at UCSB and the support of the NSF MRSEC program (DMR 1121053) for MRL characterization facilities. A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded National Nanotechnology Infrastructure Network (NNIN).",

year = "2013",

month = feb,

doi = "10.1016/j.actamat.2012.10.042",

language = "English (US)",

volume = "61",

pages = "945--951",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

AU - Denbaars, Steven P.

AU - Feezell, Daniel

AU - Kelchner, Katheryn

AU - Pimputkar, Siddha

AU - Pan, Chi Chen

AU - Yen, Chia Chen

AU - Tanaka, Shinichi

AU - Zhao, Yuji

AU - Pfaff, Nathan

AU - Farrell, Robert

AU - Iza, Mike

AU - Keller, Stacia

AU - Mishra, Umesh

AU - Speck, James S.

AU - Nakamura, Shuji

N1 - Funding Information: The authors would like to thank Mitsubishi Chemical Corporation for the supply of bulk GaN substrates. The authors acknowledge the Solid State Lighting and Energy Center (SSLEC) at UCSB and the support of the NSF MRSEC program (DMR 1121053) for MRL characterization facilities. A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded National Nanotechnology Infrastructure Network (NNIN).

PY - 2013/2

Y1 - 2013/2

N2 - Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm W-1, and external quantum efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies, such as incandescent and compact fluorescent (CFL) lighting. Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. The emphasis on nonpolar and semipolar LEDs highlights high-power violet and blue emitters, and we consider the effects of indium incorporation and well width. Semipolar GaN materials have enabled the development of high-efficiency LEDs in the blue region and recent achievements of green laser diodes at 520 nm.

AB - Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm W-1, and external quantum efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies, such as incandescent and compact fluorescent (CFL) lighting. Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. The emphasis on nonpolar and semipolar LEDs highlights high-power violet and blue emitters, and we consider the effects of indium incorporation and well width. Semipolar GaN materials have enabled the development of high-efficiency LEDs in the blue region and recent achievements of green laser diodes at 520 nm.

KW - GaN

KW - LEDs

KW - Laser diodes

KW - Solid-state lighting

UR - http://www.scopus.com/inward/record.url?scp=84872726687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872726687&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2012.10.042

DO - 10.1016/j.actamat.2012.10.042

M3 - Article

AN - SCOPUS:84872726687

SN - 1359-6454

VL - 61

SP - 945

EP - 951

JO - Acta Materialia

JF - Acta Materialia

IS - 3

ER -

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this