Abstract
This paper reports the results of the study comparing various patterning and plating methods for the deposition of Cu electrodes on transparent conductive oxides for silicon heterojunction solar cells. We compared direct electroplating of Cu on different metal seeds (Ag, Ni, Cr and Ti deposited on transparent conductive oxide by physical vapor deposition) to the light induced plating of Ni/Cu directly on transparent conductive oxide. Patterning was done either using photoresists (formed by spin-on, screen printing or lamination) or lift-off of the PECVD dielectric using screen printed resist. The geometry of the fingers, line resistance, contact resistance and adhesion were used as comparative parameters. We identified direct electroplating of Cu on the sputtered Ag seed to achieve the lowest contact resistance and the best adhesion. All photoresists were able to achieve less than 60 micron resolution and could produce the fingers with the sought height (some, however, having a characteristic mushroom shape). The best silicon heterojunction cell with Cu contacts directly electroplated on the sputtered Ag seed achieved 21.9% efficiency on 153 cm2 area.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-4 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - May 25 2018 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
| Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 6/25/17 → 6/30/17 |
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ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Development of Cu plating for silicon heterojunction solar cells. / Aguilar, Antony; Herasimenka, Stanislau; Karas, Joseph; Jain, Harsh; Lee, Jongwon; Munoz, Krystal; Michaelson, Lynne; Tyson, Tom; Dauksher, William J.; Bowden, Stuart.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Development of Cu plating for silicon heterojunction solar cells
AU - Aguilar, Antony
AU - Herasimenka, Stanislau
AU - Karas, Joseph
AU - Jain, Harsh
AU - Lee, Jongwon
AU - Munoz, Krystal
AU - Michaelson, Lynne
AU - Tyson, Tom
AU - Dauksher, William J.
AU - Bowden, Stuart
PY - 2018/5/25
Y1 - 2018/5/25
N2 - This paper reports the results of the study comparing various patterning and plating methods for the deposition of Cu electrodes on transparent conductive oxides for silicon heterojunction solar cells. We compared direct electroplating of Cu on different metal seeds (Ag, Ni, Cr and Ti deposited on transparent conductive oxide by physical vapor deposition) to the light induced plating of Ni/Cu directly on transparent conductive oxide. Patterning was done either using photoresists (formed by spin-on, screen printing or lamination) or lift-off of the PECVD dielectric using screen printed resist. The geometry of the fingers, line resistance, contact resistance and adhesion were used as comparative parameters. We identified direct electroplating of Cu on the sputtered Ag seed to achieve the lowest contact resistance and the best adhesion. All photoresists were able to achieve less than 60 micron resolution and could produce the fingers with the sought height (some, however, having a characteristic mushroom shape). The best silicon heterojunction cell with Cu contacts directly electroplated on the sputtered Ag seed achieved 21.9% efficiency on 153 cm2 area.
AB - This paper reports the results of the study comparing various patterning and plating methods for the deposition of Cu electrodes on transparent conductive oxides for silicon heterojunction solar cells. We compared direct electroplating of Cu on different metal seeds (Ag, Ni, Cr and Ti deposited on transparent conductive oxide by physical vapor deposition) to the light induced plating of Ni/Cu directly on transparent conductive oxide. Patterning was done either using photoresists (formed by spin-on, screen printing or lamination) or lift-off of the PECVD dielectric using screen printed resist. The geometry of the fingers, line resistance, contact resistance and adhesion were used as comparative parameters. We identified direct electroplating of Cu on the sputtered Ag seed to achieve the lowest contact resistance and the best adhesion. All photoresists were able to achieve less than 60 micron resolution and could produce the fingers with the sought height (some, however, having a characteristic mushroom shape). The best silicon heterojunction cell with Cu contacts directly electroplated on the sputtered Ag seed achieved 21.9% efficiency on 153 cm2 area.
UR - http://www.scopus.com/inward/record.url?scp=85048473290&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048473290&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366440
DO - 10.1109/PVSC.2017.8366440
M3 - Conference contribution
AN - SCOPUS:85048473290
SP - 1
EP - 4
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -