TY - GEN
T1 - Development of Cu plating for silicon heterojunction solar cells
AU - Aguilar, Antony
AU - Herasimenka, Stanislau
AU - Karas, Joseph
AU - Jain, Harsh
AU - Lee, Jongwon
AU - Munoz, Krystal
AU - Michaelson, Lynne
AU - Tyson, Tom
AU - Dauksher, William J.
AU - Bowden, Stuart
N1 - Funding Information:
We would like to thank DuPont and Sun Chemical for providing the materials. This material is based upon work supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under cooperative agreement No. EEC-1041895.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - This paper reports the results of the study comparing various patterning and plating methods for the deposition of Cu electrodes on transparent conductive oxides for silicon heterojunction solar cells. We compared direct electroplating of Cu on different metal seeds (Ag, Ni, Cr and Ti deposited on transparent conductive oxide by physical vapor deposition) to the light induced plating of Ni/Cu directly on transparent conductive oxide. Patterning was done either using photoresists (formed by spin-on, screen printing or lamination) or lift-off of the PECVD dielectric using screen printed resist. The geometry of the fingers, line resistance, contact resistance and adhesion were used as comparative parameters. We identified direct electroplating of Cu on the sputtered Ag seed to achieve the lowest contact resistance and the best adhesion. All photoresists were able to achieve less than 60 micron resolution and could produce the fingers with the sought height (some, however, having a characteristic mushroom shape). The best silicon heterojunction cell with Cu contacts directly electroplated on the sputtered Ag seed achieved 21.9% efficiency on 153 cm2 area.
AB - This paper reports the results of the study comparing various patterning and plating methods for the deposition of Cu electrodes on transparent conductive oxides for silicon heterojunction solar cells. We compared direct electroplating of Cu on different metal seeds (Ag, Ni, Cr and Ti deposited on transparent conductive oxide by physical vapor deposition) to the light induced plating of Ni/Cu directly on transparent conductive oxide. Patterning was done either using photoresists (formed by spin-on, screen printing or lamination) or lift-off of the PECVD dielectric using screen printed resist. The geometry of the fingers, line resistance, contact resistance and adhesion were used as comparative parameters. We identified direct electroplating of Cu on the sputtered Ag seed to achieve the lowest contact resistance and the best adhesion. All photoresists were able to achieve less than 60 micron resolution and could produce the fingers with the sought height (some, however, having a characteristic mushroom shape). The best silicon heterojunction cell with Cu contacts directly electroplated on the sputtered Ag seed achieved 21.9% efficiency on 153 cm2 area.
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U2 - 10.1109/PVSC.2017.8366440
DO - 10.1109/PVSC.2017.8366440
M3 - Conference contribution
AN - SCOPUS:85048473290
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 1220
EP - 1221
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -