Abstract

This paper describes the feasibility of integrating, high-temperature (HT) silicon-on-insulator (SOI) technology with silicon-carbide- (SiC-) based integrated circuits (ICs) to create an efficient, high-temperature (240 °C) power controller. A discussion of the use of HT SOI for high-level circuits (i.e., the microcontroller and the gate array) is provided along with an example circuit. Normally OFF JFETs made from SiC were used to drive the output loads. Issues and solutions for interfacing SiC JFETs with HT SOI technology are discussed. The use of a HT SOI MESFET is described as is a SiC-based JFET H-bridge circuit. Such circuit designs will improve the efficiency of future smart grid power controllers. Keywords: SOI, SiC, Power Controller, High Temperature, H-bridge, JFET, Smart Grid.

Original languageEnglish (US)
Title of host publicationProceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
Pages96-103
Number of pages8
StatePublished - Dec 1 2009
Event2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009 - Oxford, United Kingdom
Duration: Sep 13 2009Sep 16 2009

Publication series

NameProceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009

Other

Other2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
CountryUnited Kingdom
CityOxford
Period9/13/099/16/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Henfling, J. A., Atcitty, S., Maldonado, F., Normann, R., Summers, N., & Thornton, T. (2009). Development of an integrated power controller based on SOI and SiC. In Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009 (pp. 96-103). (Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009).