TY - GEN
T1 - Development of an integrated power controller based on SOI and SiC
AU - Henfling, Joseph A.
AU - Atcitty, Stan
AU - Maldonado, Frank
AU - Normann, Randy
AU - Summers, Nicholas
AU - Thornton, Trevor
PY - 2009/12/1
Y1 - 2009/12/1
N2 - This paper describes the feasibility of integrating, high-temperature (HT) silicon-on-insulator (SOI) technology with silicon-carbide- (SiC-) based integrated circuits (ICs) to create an efficient, high-temperature (240 °C) power controller. A discussion of the use of HT SOI for high-level circuits (i.e., the microcontroller and the gate array) is provided along with an example circuit. Normally OFF JFETs made from SiC were used to drive the output loads. Issues and solutions for interfacing SiC JFETs with HT SOI technology are discussed. The use of a HT SOI MESFET is described as is a SiC-based JFET H-bridge circuit. Such circuit designs will improve the efficiency of future smart grid power controllers. Keywords: SOI, SiC, Power Controller, High Temperature, H-bridge, JFET, Smart Grid.
AB - This paper describes the feasibility of integrating, high-temperature (HT) silicon-on-insulator (SOI) technology with silicon-carbide- (SiC-) based integrated circuits (ICs) to create an efficient, high-temperature (240 °C) power controller. A discussion of the use of HT SOI for high-level circuits (i.e., the microcontroller and the gate array) is provided along with an example circuit. Normally OFF JFETs made from SiC were used to drive the output loads. Issues and solutions for interfacing SiC JFETs with HT SOI technology are discussed. The use of a HT SOI MESFET is described as is a SiC-based JFET H-bridge circuit. Such circuit designs will improve the efficiency of future smart grid power controllers. Keywords: SOI, SiC, Power Controller, High Temperature, H-bridge, JFET, Smart Grid.
UR - http://www.scopus.com/inward/record.url?scp=79959311881&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959311881&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:79959311881
SN - 0930815882
SN - 9780930815882
T3 - Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
SP - 96
EP - 103
BT - Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
T2 - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
Y2 - 13 September 2009 through 16 September 2009
ER -