Abstract
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-3 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - May 25 2018 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
| Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 6/25/17 → 6/30/17 |
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ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M.; Ding, Ding; Young, Steven R.; Vadiee, Ehsan; Ponce, Fernando; Arena, Chantal; Honsberg, Christiana; Goodnick, Stephen.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
AU - Williams, Joshua J.
AU - McFavilen, Heather
AU - Fischer, Alec M.
AU - Ding, Ding
AU - Young, Steven R.
AU - Vadiee, Ehsan
AU - Ponce, Fernando
AU - Arena, Chantal
AU - Honsberg, Christiana
AU - Goodnick, Stephen
PY - 2018/5/25
Y1 - 2018/5/25
N2 - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
AB - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
UR - http://www.scopus.com/inward/record.url?scp=85048472189&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048472189&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366449
DO - 10.1109/PVSC.2017.8366449
M3 - Conference contribution
AN - SCOPUS:85048472189
SP - 1
EP - 3
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -