Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Joshua J. Williams; Heather McFavilen; Alec M. Fischer; Ding Ding; Steven R. Young; Ehsan Vadiee; Fernando Ponce; Chantal Arena; Christiana Honsberg; Stephen Goodnick

doi:10.1109/PVSC.2017.8366449

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Joshua J. Williams, Heather McFavilen, Alec M. Fischer, Ding Ding, Steven R. Young, Ehsan Vadiee, Fernando Ponce, Chantal Arena, Christiana Honsberg, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	604-607
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366449
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2017.8366449

Cite this

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S. R., Vadiee, E., Ponce, F., Arena, C., Honsberg, C., & Goodnick, S. (2017). Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 604-607). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366449

Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M. et al.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 604-607 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Williams, JJ, McFavilen, H, Fischer, AM, Ding, D, Young, SR, Vadiee, E, Ponce, F, Arena, C, Honsberg, C & Goodnick, S 2017, Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 604-607, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366449

Williams JJ, McFavilen H, Fischer AM, Ding D, Young SR, Vadiee E et al. Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 604-607. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). https://doi.org/10.1109/PVSC.2017.8366449

Williams, Joshua J. ; McFavilen, Heather ; Fischer, Alec M. et al. / Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 604-607 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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abstract = "The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.",

author = "Williams, {Joshua J.} and Heather McFavilen and Fischer, {Alec M.} and Ding Ding and Young, {Steven R.} and Ehsan Vadiee and Fernando Ponce and Chantal Arena and Christiana Honsberg and Stephen Goodnick",

note = "Funding Information: The information, data, and work presented here was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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AU - Williams, Joshua J.

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AU - Fischer, Alec M.

AU - Ding, Ding

AU - Young, Steven R.

AU - Vadiee, Ehsan

AU - Ponce, Fernando

AU - Arena, Chantal

AU - Honsberg, Christiana

AU - Goodnick, Stephen

N1 - Funding Information: The information, data, and work presented here was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: © 2017 IEEE.

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N2 - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

AB - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

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Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Abstract

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Other

ASJC Scopus subject areas

UN SDGs

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