Abstract
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
Original language | English (US) |
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Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-3 |
Number of pages | 3 |
ISBN (Electronic) | 9781509056057 |
DOIs | |
State | Published - May 25 2018 |
Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017 |
Other
Other | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
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Country | United States |
City | Washington |
Period | 6/25/17 → 6/30/17 |
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials