Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells

Nasser H. Karam, Richard King, B. Terence Cavicchi, Dimitri D. Krut, James H. Ermer, Moran Haddad, Li Cai, David E. Joslin, Mark Takahashi, Jack W. Eldredge, Warren T. Nishikawa, David R. Lillington, Brian M. Keyes, Richard K. Ahrenkiel

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

This paper describes recent progress in the characterization, analysis, and development of high-efficiency, radiation-resistant Ga0.5In0.5P/GaAs/Ge dual-junction (DJ) and triple-junction (TJ) solar cells. DJ cells have rapidly transitioned from the laboratory to full-scale (325 kW/year) production at Spectrolab. Performance data for over 470 000 large-area (26.94 cm2), thin (140 μm) DJ solar cells grown on low-cost, high-strength Ge substrates are shown. Advances in next-generation triple-junction Ga0.5In0.5P/GaAs/Ge cells with an active Ge component cell are discussed, giving efficiencies up to 26.7% (21.65-cm2 area), AM0, at 28°C. Final-to-initial power ratios P/P0 of 0.83 were measured for these n-on-p DJ and TJ cells after irradiation with 1015 1-MeV electrons/cm2. Time-resolved photoluminescence measurements are applied to double heterostructures grown with semiconductor layers and interfaces relevant to these multijunction solar cells, to characterize surface and bulk recombination and guide further device improvements. Dual- and triple-junction Ga0.5In0.5P/GaAs/Ge cells are compared to competing space photovoltaic technologies, and found to offer 60-75% more end-of-life power than high-efficiency Si cells at a nominal array temperature of 60°C.

Original languageEnglish (US)
Pages (from-to)2116-2125
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume46
Issue number10
DOIs
StatePublished - 1999
Externally publishedYes

Fingerprint

Solar cells
solar cells
cells
Heterojunctions
Photoluminescence
Irradiation
Semiconductor materials
Radiation
Electrons
Substrates
gallium arsenide
Costs
high strength
Temperature
photoluminescence
irradiation
radiation
electrons
Multi-junction solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Karam, N. H., King, R., Terence Cavicchi, B., Krut, D. D., Ermer, J. H., Haddad, M., ... Ahrenkiel, R. K. (1999). Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells. IEEE Transactions on Electron Devices, 46(10), 2116-2125. https://doi.org/10.1109/16.792006

Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells. / Karam, Nasser H.; King, Richard; Terence Cavicchi, B.; Krut, Dimitri D.; Ermer, James H.; Haddad, Moran; Cai, Li; Joslin, David E.; Takahashi, Mark; Eldredge, Jack W.; Nishikawa, Warren T.; Lillington, David R.; Keyes, Brian M.; Ahrenkiel, Richard K.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 10, 1999, p. 2116-2125.

Research output: Contribution to journalArticle

Karam, NH, King, R, Terence Cavicchi, B, Krut, DD, Ermer, JH, Haddad, M, Cai, L, Joslin, DE, Takahashi, M, Eldredge, JW, Nishikawa, WT, Lillington, DR, Keyes, BM & Ahrenkiel, RK 1999, 'Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells', IEEE Transactions on Electron Devices, vol. 46, no. 10, pp. 2116-2125. https://doi.org/10.1109/16.792006
Karam, Nasser H. ; King, Richard ; Terence Cavicchi, B. ; Krut, Dimitri D. ; Ermer, James H. ; Haddad, Moran ; Cai, Li ; Joslin, David E. ; Takahashi, Mark ; Eldredge, Jack W. ; Nishikawa, Warren T. ; Lillington, David R. ; Keyes, Brian M. ; Ahrenkiel, Richard K. / Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells. In: IEEE Transactions on Electron Devices. 1999 ; Vol. 46, No. 10. pp. 2116-2125.
@article{d121c41d7d944ed29a24ae2cb4e83efd,
title = "Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells",
abstract = "This paper describes recent progress in the characterization, analysis, and development of high-efficiency, radiation-resistant Ga0.5In0.5P/GaAs/Ge dual-junction (DJ) and triple-junction (TJ) solar cells. DJ cells have rapidly transitioned from the laboratory to full-scale (325 kW/year) production at Spectrolab. Performance data for over 470 000 large-area (26.94 cm2), thin (140 μm) DJ solar cells grown on low-cost, high-strength Ge substrates are shown. Advances in next-generation triple-junction Ga0.5In0.5P/GaAs/Ge cells with an active Ge component cell are discussed, giving efficiencies up to 26.7{\%} (21.65-cm2 area), AM0, at 28°C. Final-to-initial power ratios P/P0 of 0.83 were measured for these n-on-p DJ and TJ cells after irradiation with 1015 1-MeV electrons/cm2. Time-resolved photoluminescence measurements are applied to double heterostructures grown with semiconductor layers and interfaces relevant to these multijunction solar cells, to characterize surface and bulk recombination and guide further device improvements. Dual- and triple-junction Ga0.5In0.5P/GaAs/Ge cells are compared to competing space photovoltaic technologies, and found to offer 60-75{\%} more end-of-life power than high-efficiency Si cells at a nominal array temperature of 60°C.",
author = "Karam, {Nasser H.} and Richard King and {Terence Cavicchi}, B. and Krut, {Dimitri D.} and Ermer, {James H.} and Moran Haddad and Li Cai and Joslin, {David E.} and Mark Takahashi and Eldredge, {Jack W.} and Nishikawa, {Warren T.} and Lillington, {David R.} and Keyes, {Brian M.} and Ahrenkiel, {Richard K.}",
year = "1999",
doi = "10.1109/16.792006",
language = "English (US)",
volume = "46",
pages = "2116--2125",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells

AU - Karam, Nasser H.

AU - King, Richard

AU - Terence Cavicchi, B.

AU - Krut, Dimitri D.

AU - Ermer, James H.

AU - Haddad, Moran

AU - Cai, Li

AU - Joslin, David E.

AU - Takahashi, Mark

AU - Eldredge, Jack W.

AU - Nishikawa, Warren T.

AU - Lillington, David R.

AU - Keyes, Brian M.

AU - Ahrenkiel, Richard K.

PY - 1999

Y1 - 1999

N2 - This paper describes recent progress in the characterization, analysis, and development of high-efficiency, radiation-resistant Ga0.5In0.5P/GaAs/Ge dual-junction (DJ) and triple-junction (TJ) solar cells. DJ cells have rapidly transitioned from the laboratory to full-scale (325 kW/year) production at Spectrolab. Performance data for over 470 000 large-area (26.94 cm2), thin (140 μm) DJ solar cells grown on low-cost, high-strength Ge substrates are shown. Advances in next-generation triple-junction Ga0.5In0.5P/GaAs/Ge cells with an active Ge component cell are discussed, giving efficiencies up to 26.7% (21.65-cm2 area), AM0, at 28°C. Final-to-initial power ratios P/P0 of 0.83 were measured for these n-on-p DJ and TJ cells after irradiation with 1015 1-MeV electrons/cm2. Time-resolved photoluminescence measurements are applied to double heterostructures grown with semiconductor layers and interfaces relevant to these multijunction solar cells, to characterize surface and bulk recombination and guide further device improvements. Dual- and triple-junction Ga0.5In0.5P/GaAs/Ge cells are compared to competing space photovoltaic technologies, and found to offer 60-75% more end-of-life power than high-efficiency Si cells at a nominal array temperature of 60°C.

AB - This paper describes recent progress in the characterization, analysis, and development of high-efficiency, radiation-resistant Ga0.5In0.5P/GaAs/Ge dual-junction (DJ) and triple-junction (TJ) solar cells. DJ cells have rapidly transitioned from the laboratory to full-scale (325 kW/year) production at Spectrolab. Performance data for over 470 000 large-area (26.94 cm2), thin (140 μm) DJ solar cells grown on low-cost, high-strength Ge substrates are shown. Advances in next-generation triple-junction Ga0.5In0.5P/GaAs/Ge cells with an active Ge component cell are discussed, giving efficiencies up to 26.7% (21.65-cm2 area), AM0, at 28°C. Final-to-initial power ratios P/P0 of 0.83 were measured for these n-on-p DJ and TJ cells after irradiation with 1015 1-MeV electrons/cm2. Time-resolved photoluminescence measurements are applied to double heterostructures grown with semiconductor layers and interfaces relevant to these multijunction solar cells, to characterize surface and bulk recombination and guide further device improvements. Dual- and triple-junction Ga0.5In0.5P/GaAs/Ge cells are compared to competing space photovoltaic technologies, and found to offer 60-75% more end-of-life power than high-efficiency Si cells at a nominal array temperature of 60°C.

UR - http://www.scopus.com/inward/record.url?scp=0033323711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033323711&partnerID=8YFLogxK

U2 - 10.1109/16.792006

DO - 10.1109/16.792006

M3 - Article

VL - 46

SP - 2116

EP - 2125

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -