Abstract

To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices.

Original languageEnglish (US)
Article numbere58292
JournalJournal of Visualized Experiments
Volume2018
Issue number141
DOIs
StatePublished - Nov 1 2018

Fingerprint

Heterojunctions
Solar cells
Carrier lifetime
Equipment and Supplies
Crystals
Atomic Force Microscopy
Epitaxial layers
Growth
Molecular beam epitaxy
Short circuit currents
Phosphorus
Atomic force microscopy
Current density
Diffraction
X-Rays
X rays
Substrates

Keywords

  • Engineering
  • Gap
  • Heterojunction solar cells
  • Issue 141
  • MBE
  • Minority-carrier lifetime
  • MoO
  • Photovoltaics
  • Si

ASJC Scopus subject areas

  • Neuroscience(all)
  • Chemical Engineering(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Immunology and Microbiology(all)

Cite this

Developing high performance GaP/Si heterojunction solar cells. / Zhang, Chaomin; Vadiee, Ehsan; Dahal, Som; King, Richard; Honsberg, Christiana.

In: Journal of Visualized Experiments, Vol. 2018, No. 141, e58292, 01.11.2018.

Research output: Contribution to journalArticle

@article{60b2fc1ab41b47359995fa169a290617,
title = "Developing high performance GaP/Si heterojunction solar cells",
abstract = "To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices.",
keywords = "Engineering, Gap, Heterojunction solar cells, Issue 141, MBE, Minority-carrier lifetime, MoO, Photovoltaics, Si",
author = "Chaomin Zhang and Ehsan Vadiee and Som Dahal and Richard King and Christiana Honsberg",
year = "2018",
month = "11",
day = "1",
doi = "10.3791/58292",
language = "English (US)",
volume = "2018",
journal = "Journal of Visualized Experiments",
issn = "1940-087X",
publisher = "MYJoVE Corporation",
number = "141",

}

TY - JOUR

T1 - Developing high performance GaP/Si heterojunction solar cells

AU - Zhang, Chaomin

AU - Vadiee, Ehsan

AU - Dahal, Som

AU - King, Richard

AU - Honsberg, Christiana

PY - 2018/11/1

Y1 - 2018/11/1

N2 - To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices.

AB - To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices.

KW - Engineering

KW - Gap

KW - Heterojunction solar cells

KW - Issue 141

KW - MBE

KW - Minority-carrier lifetime

KW - MoO

KW - Photovoltaics

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=85058022227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058022227&partnerID=8YFLogxK

U2 - 10.3791/58292

DO - 10.3791/58292

M3 - Article

VL - 2018

JO - Journal of Visualized Experiments

JF - Journal of Visualized Experiments

SN - 1940-087X

IS - 141

M1 - e58292

ER -