Determination of the electronic band structure for a graded modulation-doped AlGaNAlNGaN superlattice

Z. H. Wu, Fernando Ponce, Joachim Hertkorn, Ferdinand Scholz

Research output: Contribution to journalArticle

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Abstract

The electronic band structure of a modulation-doped AlGaNAlNGaN superlattice structure where the AlGaN layer is compositionally graded has been experimentally determined by electron holography. It is shown that all periods in the superlattice have a similar two-dimensional-electron-gas distribution, indicating no degradation in the quality of the heterostructures during growth. High-resolution potential energy profiles show that the nominally linear grading of the AlGaN barrier layers results in a parabolic profile in Al composition. Knowledge of the nature of energy barriers for electron transfer between channels is important in the optimization of the perpendicular conductivity of AlGaNGaN superlattice structures.

Original languageEnglish (US)
Article number142121
JournalApplied Physics Letters
Volume91
Issue number14
DOIs
StatePublished - 2007

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modulation
barrier layers
profiles
electronics
holography
electron gas
electron transfer
potential energy
degradation
conductivity
optimization
high resolution
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Determination of the electronic band structure for a graded modulation-doped AlGaNAlNGaN superlattice. / Wu, Z. H.; Ponce, Fernando; Hertkorn, Joachim; Scholz, Ferdinand.

In: Applied Physics Letters, Vol. 91, No. 14, 142121, 2007.

Research output: Contribution to journalArticle

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