Abstract
Transmission electron microscopy is used to investigate the structure of inversion domain boundaries in α-GaN (0001) films grown by metal-organic chemical vapour deposition on sapphire substrates. Convergent-beam electron diffraction is used to establish the existence of inversion domains with (1010) boundaries. Displacement fringes observed in two-beam images recorded from inclined inversion domain boundaries are compared with dynamical simulations. It is shown that the results are consistent with an atomic model in which fourfold bonding is preserved with all bonds being of the Ga-N type. The significance of the results for understanding the electronic properties of GaN is briefly discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 273-286 |
| Number of pages | 14 |
| Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
| Volume | 77 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1998 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- Metals and Alloys