Abstract

Polarization fields within InAs nanopillars with zincblende(ZB)/ wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.

Original languageEnglish (US)
Pages (from-to)1052-1057
Number of pages6
JournalAdvanced Materials
Volume26
Issue number7
DOIs
StatePublished - Feb 19 2014

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Polarization
Electric properties
Ions
indium arsenide

Keywords

  • InAs
  • nanopillars
  • off-axis electron holography
  • polytype heterocrystalline structures
  • probe-corrected HAADF imaging
  • spontaneous polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Determination of polarization-fields across polytype interfaces in InAs nanopillars. / Li, Luying; Gan, Zhaofeng; McCartney, Martha; Liang, Hanshuang; Yu, Hongbin; Yin, Wan Jian; Yan, Yanfa; Gao, Yihua; Wang, Jianbo; Smith, David.

In: Advanced Materials, Vol. 26, No. 7, 19.02.2014, p. 1052-1057.

Research output: Contribution to journalArticle

Li, Luying ; Gan, Zhaofeng ; McCartney, Martha ; Liang, Hanshuang ; Yu, Hongbin ; Yin, Wan Jian ; Yan, Yanfa ; Gao, Yihua ; Wang, Jianbo ; Smith, David. / Determination of polarization-fields across polytype interfaces in InAs nanopillars. In: Advanced Materials. 2014 ; Vol. 26, No. 7. pp. 1052-1057.
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AU - Yu, Hongbin

AU - Yin, Wan Jian

AU - Yan, Yanfa

AU - Gao, Yihua

AU - Wang, Jianbo

AU - Smith, David

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