Abstract

Polarization fields within InAs nanopillars with zincblende(ZB)/ wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.

Original languageEnglish (US)
Pages (from-to)1052-1057
Number of pages6
JournalAdvanced Materials
Volume26
Issue number7
DOIs
StatePublished - Feb 19 2014

Keywords

  • InAs
  • nanopillars
  • off-axis electron holography
  • polytype heterocrystalline structures
  • probe-corrected HAADF imaging
  • spontaneous polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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