Abstract

The extracted minority carrier lifetime in the n-layer of a diamond PIN diode on (111)- oriented diamond is presented here using the diode reverse recovery method. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during the measurement. The minority carrier lifetime of holes was measured to be ~ 6ns. The results obtained were compared to PIN diodes on (100)- where the n-side is fully depleted. The storage time delay was found to be negligible in the (100)- case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.

Original languageEnglish (US)
JournalIEEE Electron Device Letters
DOIs
StateAccepted/In press - Feb 9 2018

Fingerprint

Diamond
Carrier lifetime
Diamonds
Time delay
Diodes
Recovery
Cathodoluminescence

Keywords

  • Cathodes
  • Charge carrier lifetime
  • Charge carrier lifetime
  • Current measurement
  • Delay effects
  • Diamond
  • Diamond
  • p-i-n diodes
  • PIN photodiodes
  • Power semiconductor devices
  • Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Determination of Minority Carrier Lifetime of Holes in Diamond PIN Diodes Using Reverse Recovery Method. / Dutta, Maitreya; Mandal, Saptarshi; Hathwar, Raghuraj; Fischer, Alec M.; Koeck, Franz A.M.; Nemanich, Robert; Goodnick, Stephen; Chowdhury, Srabanti.

In: IEEE Electron Device Letters, 09.02.2018.

Research output: Contribution to journalArticle

Dutta, Maitreya ; Mandal, Saptarshi ; Hathwar, Raghuraj ; Fischer, Alec M. ; Koeck, Franz A.M. ; Nemanich, Robert ; Goodnick, Stephen ; Chowdhury, Srabanti. / Determination of Minority Carrier Lifetime of Holes in Diamond PIN Diodes Using Reverse Recovery Method. In: IEEE Electron Device Letters. 2018.
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abstract = "The extracted minority carrier lifetime in the n-layer of a diamond PIN diode on (111)- oriented diamond is presented here using the diode reverse recovery method. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during the measurement. The minority carrier lifetime of holes was measured to be ~ 6ns. The results obtained were compared to PIN diodes on (100)- where the n-side is fully depleted. The storage time delay was found to be negligible in the (100)- case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.",
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