Abstract
The extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)- oriented diamond is presented here using the diode reverse recovery method. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during the measurement. The minority carrier lifetime of holes was measured to be 6 ns. The results obtained were compared to p-i-n diodes on (100)- where the n-side was fully depleted. The storage time delay was found to be negligible in the (100)- case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.
Original language | English (US) |
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Pages (from-to) | 552-555 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2018 |
Keywords
- Charge carrier lifetime
- diamond
- p-i-n diodes
- power semiconductor devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering