Abstract

The extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)- oriented diamond is presented here using the diode reverse recovery method. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during the measurement. The minority carrier lifetime of holes was measured to be 6 ns. The results obtained were compared to p-i-n diodes on (100)- where the n-side was fully depleted. The storage time delay was found to be negligible in the (100)- case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.

Original languageEnglish (US)
Pages (from-to)552-555
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number4
DOIs
StatePublished - Apr 2018

Keywords

  • Charge carrier lifetime
  • diamond
  • p-i-n diodes
  • power semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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