Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

Zhaofeng Gan; Michael DiNezza; Yong-Hang Zhang; David Smith; Martha McCartney

doi:10.1017/S1431927615015378

Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

Zhaofeng Gan, Michael DiNezza, Yong-Hang Zhang, David Smith, Martha McCartney

Research output: Contribution to journal › Article › peer-review

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Abstract

The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

Original language	English (US)
Pages (from-to)	1406-1412
Number of pages	7
Journal	Microscopy and Microanalysis
Volume	21
Issue number	6
DOIs	https://doi.org/10.1017/S1431927615015378
State	Published - Nov 27 2015

Keywords

ZnTe
dynamic effects
electron holography
inelastic mean free path
mean inner potential

ASJC Scopus subject areas

Instrumentation

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10.1017/S1431927615015378

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title = "Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination",

abstract = "The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.",

keywords = "ZnTe, dynamic effects, electron holography, inelastic mean free path, mean inner potential",

author = "Zhaofeng Gan and Michael DiNezza and Yong-Hang Zhang and David Smith and Martha McCartney",

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doi = "10.1017/S1431927615015378",

language = "English (US)",

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T1 - Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

AU - Gan, Zhaofeng

AU - DiNezza, Michael

AU - Zhang, Yong-Hang

AU - Smith, David

AU - McCartney, Martha

N1 - Publisher Copyright: © Microscopy Society of America 2015.

PY - 2015/11/27

Y1 - 2015/11/27

N2 - The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

AB - The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

KW - ZnTe

KW - dynamic effects

KW - electron holography

KW - inelastic mean free path

KW - mean inner potential

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Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

Abstract

Keywords

ASJC Scopus subject areas

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