Abstract

The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

Original languageEnglish (US)
Pages (from-to)1-7
Number of pages7
JournalMicroscopy and Microanalysis
DOIs
StateAccepted/In press - Nov 27 2015

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Electron holography
mean free path
holography
Phase measurement
Electron diffraction
electrons
simulation
Semiconductor materials
Imaging techniques
electron diffraction

Keywords

  • dynamic effects
  • electron holography
  • inelastic mean free path
  • mean inner potential
  • ZnTe

ASJC Scopus subject areas

  • Instrumentation

Cite this

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title = "Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination",
abstract = "The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.",
keywords = "dynamic effects, electron holography, inelastic mean free path, mean inner potential, ZnTe",
author = "Zhaofeng Gan and Michael DiNezza and Yong-Hang Zhang and David Smith and Martha McCartney",
year = "2015",
month = "11",
day = "27",
doi = "10.1017/S1431927615015378",
language = "English (US)",
pages = "1--7",
journal = "Microscopy and Microanalysis",
issn = "1431-9276",
publisher = "Cambridge University Press",

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T1 - Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

AU - Gan, Zhaofeng

AU - DiNezza, Michael

AU - Zhang, Yong-Hang

AU - Smith, David

AU - McCartney, Martha

PY - 2015/11/27

Y1 - 2015/11/27

N2 - The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

AB - The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

KW - dynamic effects

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KW - inelastic mean free path

KW - mean inner potential

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