Determination of in concentration in pseudomorphic In xGa 1-xN quantum wells based on convergent-beam electron diffraction

J. N. Stirman; M. Takeguchi; Martha McCartney; David Smith

doi:10.1063/1.1641173

Determination of in concentration in pseudomorphic In _xGa _1-xN quantum wells based on convergent-beam electron diffraction

J. N. Stirman, M. Takeguchi, Martha McCartney, David Smith

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The elemental composition of a pseudomorphic GaN/In _xGa _1-xN/GaN quantum-well structure was determined using convergent-beam electron diffraction (CBED). Areas of triangles, which were formed due to the intersection of higher-order Laue-zone (HOLZ) lines, were highly sensitive to lattice-parameter variations. The local In concentration was determined to be within ±0.5% by calculating the ratio of triangle areas. The results show that the HOLZ-line visibility can be improved by cooling the sample to lower temperature.

Original language	English (US)
Pages (from-to)	490-492
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.1641173
State	Published - Jan 26 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1641173

Cite this

@article{bb6aeae0c0474061bdc6c011397affc0,

title = "Determination of in concentration in pseudomorphic In xGa 1-xN quantum wells based on convergent-beam electron diffraction",

abstract = "The elemental composition of a pseudomorphic GaN/In xGa 1-xN/GaN quantum-well structure was determined using convergent-beam electron diffraction (CBED). Areas of triangles, which were formed due to the intersection of higher-order Laue-zone (HOLZ) lines, were highly sensitive to lattice-parameter variations. The local In concentration was determined to be within ±0.5% by calculating the ratio of triangle areas. The results show that the HOLZ-line visibility can be improved by cooling the sample to lower temperature.",

author = "Stirman, {J. N.} and M. Takeguchi and Martha McCartney and David Smith",

year = "2004",

month = jan,

day = "26",

doi = "10.1063/1.1641173",

language = "English (US)",

volume = "84",

pages = "490--492",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Determination of in concentration in pseudomorphic In xGa 1-xN quantum wells based on convergent-beam electron diffraction

AU - Stirman, J. N.

AU - Takeguchi, M.

AU - McCartney, Martha

AU - Smith, David

PY - 2004/1/26

Y1 - 2004/1/26

N2 - The elemental composition of a pseudomorphic GaN/In xGa 1-xN/GaN quantum-well structure was determined using convergent-beam electron diffraction (CBED). Areas of triangles, which were formed due to the intersection of higher-order Laue-zone (HOLZ) lines, were highly sensitive to lattice-parameter variations. The local In concentration was determined to be within ±0.5% by calculating the ratio of triangle areas. The results show that the HOLZ-line visibility can be improved by cooling the sample to lower temperature.

AB - The elemental composition of a pseudomorphic GaN/In xGa 1-xN/GaN quantum-well structure was determined using convergent-beam electron diffraction (CBED). Areas of triangles, which were formed due to the intersection of higher-order Laue-zone (HOLZ) lines, were highly sensitive to lattice-parameter variations. The local In concentration was determined to be within ±0.5% by calculating the ratio of triangle areas. The results show that the HOLZ-line visibility can be improved by cooling the sample to lower temperature.

UR - http://www.scopus.com/inward/record.url?scp=1242307335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1242307335&partnerID=8YFLogxK

U2 - 10.1063/1.1641173

DO - 10.1063/1.1641173

M3 - Article

AN - SCOPUS:1242307335

SN - 0003-6951

VL - 84

SP - 490

EP - 492

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Determination of in concentration in pseudomorphic In _xGa _1-xN quantum wells based on convergent-beam electron diffraction

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this