Determination of in concentration in pseudomorphic In xGa 1-xN quantum wells based on convergent-beam electron diffraction

J. N. Stirman, M. Takeguchi, Martha McCartney, David Smith

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The elemental composition of a pseudomorphic GaN/In xGa 1-xN/GaN quantum-well structure was determined using convergent-beam electron diffraction (CBED). Areas of triangles, which were formed due to the intersection of higher-order Laue-zone (HOLZ) lines, were highly sensitive to lattice-parameter variations. The local In concentration was determined to be within ±0.5% by calculating the ratio of triangle areas. The results show that the HOLZ-line visibility can be improved by cooling the sample to lower temperature.

Original languageEnglish (US)
Pages (from-to)490-492
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - Jan 26 2004


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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