Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

J. B. Wang, Shane Johnson, S. A. Chaparro, D. Ding, Yu Cao, Yu G. Sadofyev, Yong-Hang Zhang, J. A. Gupta, C. Z. Guo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

Original languageEnglish (US)
Title of host publication2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages66-71
Number of pages6
Volume2003-August
ISBN (Electronic)0780386140
DOIs
StatePublished - 2003
Event30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other30th International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wang, J. B., Johnson, S., Chaparro, S. A., Ding, D., Cao, Y., Sadofyev, Y. G., Zhang, Y-H., Gupta, J. A., & Guo, C. Z. (2003). Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (Vol. 2003-August, pp. 66-71). [1354433] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354433