Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

J. B. Wang, Shane Johnson, S. A. Chaparro, D. Ding, Yu Cao, Yu G. Sadofyev, Yong-Hang Zhang, J. A. Gupta, C. Z. Guo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

Original languageEnglish (US)
Title of host publication2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages66-71
Number of pages6
Volume2003-August
ISBN (Electronic)0780386140
DOIs
StatePublished - 2003
Event30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other30th International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Fingerprint

Photoluminescence spectroscopy
Conduction bands
Heterojunctions
Bending (forming)
Semiconductor quantum wells
Energy gap
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wang, J. B., Johnson, S., Chaparro, S. A., Ding, D., Cao, Y., Sadofyev, Y. G., ... Guo, C. Z. (2003). Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (Vol. 2003-August, pp. 66-71). [1354433] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354433

Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. / Wang, J. B.; Johnson, Shane; Chaparro, S. A.; Ding, D.; Cao, Yu; Sadofyev, Yu G.; Zhang, Yong-Hang; Gupta, J. A.; Guo, C. Z.

2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Vol. 2003-August Institute of Electrical and Electronics Engineers Inc., 2003. p. 66-71 1354433.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, JB, Johnson, S, Chaparro, SA, Ding, D, Cao, Y, Sadofyev, YG, Zhang, Y-H, Gupta, JA & Guo, CZ 2003, Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. in 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. vol. 2003-August, 1354433, Institute of Electrical and Electronics Engineers Inc., pp. 66-71, 30th International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCSPC.2003.1354433
Wang JB, Johnson S, Chaparro SA, Ding D, Cao Y, Sadofyev YG et al. Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Vol. 2003-August. Institute of Electrical and Electronics Engineers Inc. 2003. p. 66-71. 1354433 https://doi.org/10.1109/ISCSPC.2003.1354433
Wang, J. B. ; Johnson, Shane ; Chaparro, S. A. ; Ding, D. ; Cao, Yu ; Sadofyev, Yu G. ; Zhang, Yong-Hang ; Gupta, J. A. ; Guo, C. Z. / Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Vol. 2003-August Institute of Electrical and Electronics Engineers Inc., 2003. pp. 66-71
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abstract = "Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.",
author = "Wang, {J. B.} and Shane Johnson and Chaparro, {S. A.} and D. Ding and Yu Cao and Sadofyev, {Yu G.} and Yong-Hang Zhang and Gupta, {J. A.} and Guo, {C. Z.}",
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T1 - Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

AU - Wang, J. B.

AU - Johnson, Shane

AU - Chaparro, S. A.

AU - Ding, D.

AU - Cao, Yu

AU - Sadofyev, Yu G.

AU - Zhang, Yong-Hang

AU - Gupta, J. A.

AU - Guo, C. Z.

PY - 2003

Y1 - 2003

N2 - Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

AB - Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

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