Determination of GaAs/GaAsSb heterojunction conduction band offset

J. B. Wang; Shane Johnson; C. Z. Guo; S. A. Chaparro; J. A. Gupta; Yu G. Sadofyev; Yu Cao; N. Samal; X. Jin; S. Q. Yu; D. Ding; Yong-Hang Zhang

doi:10.1109/ISCS.2003.1239983

Determination of GaAs/GaAsSb heterojunction conduction band offset

J. B. Wang, Shane Johnson, C. Z. Guo, S. A. Chaparro, J. A. Gupta, Yu G. Sadofyev, Yu Cao, N. Samal, X. Jin, S. Q. Yu, D. Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	217-218
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239983
State	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

Keywords

Councils
Gallium arsenide
Heterojunctions
Laser modes
Laser theory
Photonic band gap
Physics
Solid state circuits
Surface waves
Vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239983

Cite this

Wang, J. B., Johnson, S., Guo, C. Z., Chaparro, S. A., Gupta, J. A., Sadofyev, Y. G., Cao, Y., Samal, N., Jin, X., Yu, S. Q., Ding, D., & Zhang, Y.-H. (2003). Determination of GaAs/GaAsSb heterojunction conduction band offset. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 217-218). Article 1239983 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239983

Determination of GaAs/GaAsSb heterojunction conduction band offset. / Wang, J. B.; Johnson, Shane; Guo, C. Z. et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 217-218 1239983 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, JB, Johnson, S, Guo, CZ, Chaparro, SA, Gupta, JA, Sadofyev, YG, Cao, Y, Samal, N, Jin, X, Yu, SQ, Ding, D & Zhang, Y-H 2003, Determination of GaAs/GaAsSb heterojunction conduction band offset. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239983, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 217-218, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCS.2003.1239983

Wang JB, Johnson S, Guo CZ, Chaparro SA, Gupta JA, Sadofyev YG et al. Determination of GaAs/GaAsSb heterojunction conduction band offset. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 217-218. 1239983. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239983

@inproceedings{d641daef0a26452f880c1660c8911d80,

title = "Determination of GaAs/GaAsSb heterojunction conduction band offset",

keywords = "Councils, Gallium arsenide, Heterojunctions, Laser modes, Laser theory, Photonic band gap, Physics, Solid state circuits, Surface waves, Vertical cavity surface emitting lasers",

author = "Wang, {J. B.} and Shane Johnson and Guo, {C. Z.} and Chaparro, {S. A.} and Gupta, {J. A.} and Sadofyev, {Yu G.} and Yu Cao and N. Samal and X. Jin and Yu, {S. Q.} and D. Ding and Yong-Hang Zhang",

year = "2003",

doi = "10.1109/ISCS.2003.1239983",

language = "English (US)",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "217--218",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

note = "2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

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TY - GEN

T1 - Determination of GaAs/GaAsSb heterojunction conduction band offset

AU - Wang, J. B.

AU - Johnson, Shane

AU - Guo, C. Z.

AU - Chaparro, S. A.

AU - Gupta, J. A.

AU - Sadofyev, Yu G.

AU - Cao, Yu

AU - Samal, N.

AU - Jin, X.

AU - Yu, S. Q.

AU - Ding, D.

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

KW - Councils

KW - Gallium arsenide

KW - Heterojunctions

KW - Laser modes

KW - Laser theory

KW - Photonic band gap

KW - Physics

KW - Solid state circuits

KW - Surface waves

KW - Vertical cavity surface emitting lasers

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U2 - 10.1109/ISCS.2003.1239983

DO - 10.1109/ISCS.2003.1239983

M3 - Conference contribution

AN - SCOPUS:84943519584

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 217

EP - 218

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Determination of GaAs/GaAsSb heterojunction conduction band offset

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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