Determination of GaAs/GaAsSb heterojunction conduction band offset

J. B. Wang, Shane Johnson, C. Z. Guo, S. A. Chaparro, J. A. Gupta, Yu G. Sadofyev, Yu Cao, N. Samal, X. Jin, S. Q. Yu, D. Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages217-218
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Fingerprint

Laser theory
Photonic band gap
Gallium arsenide
Surface emitting lasers
Laser modes
Conduction bands
Surface waves
Heterojunctions
Physics

Keywords

  • Councils
  • Gallium arsenide
  • Heterojunctions
  • Laser modes
  • Laser theory
  • Photonic band gap
  • Physics
  • Solid state circuits
  • Surface waves
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wang, J. B., Johnson, S., Guo, C. Z., Chaparro, S. A., Gupta, J. A., Sadofyev, Y. G., ... Zhang, Y-H. (2003). Determination of GaAs/GaAsSb heterojunction conduction band offset. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 217-218). [1239983] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239983

Determination of GaAs/GaAsSb heterojunction conduction band offset. / Wang, J. B.; Johnson, Shane; Guo, C. Z.; Chaparro, S. A.; Gupta, J. A.; Sadofyev, Yu G.; Cao, Yu; Samal, N.; Jin, X.; Yu, S. Q.; Ding, D.; Zhang, Yong-Hang.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 217-218 1239983.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, JB, Johnson, S, Guo, CZ, Chaparro, SA, Gupta, JA, Sadofyev, YG, Cao, Y, Samal, N, Jin, X, Yu, SQ, Ding, D & Zhang, Y-H 2003, Determination of GaAs/GaAsSb heterojunction conduction band offset. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239983, Institute of Electrical and Electronics Engineers Inc., pp. 217-218, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCS.2003.1239983
Wang JB, Johnson S, Guo CZ, Chaparro SA, Gupta JA, Sadofyev YG et al. Determination of GaAs/GaAsSb heterojunction conduction band offset. In IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 217-218. 1239983 https://doi.org/10.1109/ISCS.2003.1239983
Wang, J. B. ; Johnson, Shane ; Guo, C. Z. ; Chaparro, S. A. ; Gupta, J. A. ; Sadofyev, Yu G. ; Cao, Yu ; Samal, N. ; Jin, X. ; Yu, S. Q. ; Ding, D. ; Zhang, Yong-Hang. / Determination of GaAs/GaAsSb heterojunction conduction band offset. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 217-218
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