Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates

J. Chai, O. C. Noriega, A. Dedigama, J. J. Kim, A. A. Savage, K. Doyle, C. Smith, N. Chau, J. Pena, J. H. Dinan, David Smith, T. H. Myers

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Cross-section electron micrographs, cathodoluminescence images, confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115 nm and 329 nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150 nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350 nm to 375 nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250 nm to 275 nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-μm-thick lattice-matched ZnTe0.99Se 0.01 layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of ∼7 × 104 cm-2.

Original languageEnglish (US)
Pages (from-to)3090-3096
Number of pages7
JournalJournal of Electronic Materials
Volume42
Issue number11
DOIs
StatePublished - Nov 2013

Fingerprint

Epitaxial layers
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
Diffraction
X rays
Cathodoluminescence
Electrons
Substrates
Buffer layers
Dislocations (crystals)
Epitaxial growth
Hydrogen
Plastic deformation
Imaging techniques
x ray diffraction
photoluminescence
strain measurement
cathodoluminescence
multiplication

Keywords

  • confocal photoluminescence
  • critical thickness
  • GaSb
  • transmission electron microscopy
  • x-ray diffraction
  • ZnTe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates. / Chai, J.; Noriega, O. C.; Dedigama, A.; Kim, J. J.; Savage, A. A.; Doyle, K.; Smith, C.; Chau, N.; Pena, J.; Dinan, J. H.; Smith, David; Myers, T. H.

In: Journal of Electronic Materials, Vol. 42, No. 11, 11.2013, p. 3090-3096.

Research output: Contribution to journalArticle

Chai, J, Noriega, OC, Dedigama, A, Kim, JJ, Savage, AA, Doyle, K, Smith, C, Chau, N, Pena, J, Dinan, JH, Smith, D & Myers, TH 2013, 'Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates', Journal of Electronic Materials, vol. 42, no. 11, pp. 3090-3096. https://doi.org/10.1007/s11664-013-2650-8
Chai, J. ; Noriega, O. C. ; Dedigama, A. ; Kim, J. J. ; Savage, A. A. ; Doyle, K. ; Smith, C. ; Chau, N. ; Pena, J. ; Dinan, J. H. ; Smith, David ; Myers, T. H. / Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates. In: Journal of Electronic Materials. 2013 ; Vol. 42, No. 11. pp. 3090-3096.
@article{504fdf13d04f4bb79ba06ee2fc2ee74d,
title = "Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates",
abstract = "Cross-section electron micrographs, cathodoluminescence images, confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115 nm and 329 nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150 nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350 nm to 375 nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250 nm to 275 nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-μm-thick lattice-matched ZnTe0.99Se 0.01 layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of ∼7 × 104 cm-2.",
keywords = "confocal photoluminescence, critical thickness, GaSb, transmission electron microscopy, x-ray diffraction, ZnTe",
author = "J. Chai and Noriega, {O. C.} and A. Dedigama and Kim, {J. J.} and Savage, {A. A.} and K. Doyle and C. Smith and N. Chau and J. Pena and Dinan, {J. H.} and David Smith and Myers, {T. H.}",
year = "2013",
month = "11",
doi = "10.1007/s11664-013-2650-8",
language = "English (US)",
volume = "42",
pages = "3090--3096",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "11",

}

TY - JOUR

T1 - Determination of critical thickness for epitaxial ZnTe layers grown by molecular beam epitaxy on (211)B and (100) GaSb substrates

AU - Chai, J.

AU - Noriega, O. C.

AU - Dedigama, A.

AU - Kim, J. J.

AU - Savage, A. A.

AU - Doyle, K.

AU - Smith, C.

AU - Chau, N.

AU - Pena, J.

AU - Dinan, J. H.

AU - Smith, David

AU - Myers, T. H.

PY - 2013/11

Y1 - 2013/11

N2 - Cross-section electron micrographs, cathodoluminescence images, confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115 nm and 329 nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150 nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350 nm to 375 nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250 nm to 275 nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-μm-thick lattice-matched ZnTe0.99Se 0.01 layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of ∼7 × 104 cm-2.

AB - Cross-section electron micrographs, cathodoluminescence images, confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115 nm and 329 nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150 nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350 nm to 375 nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250 nm to 275 nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-μm-thick lattice-matched ZnTe0.99Se 0.01 layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of ∼7 × 104 cm-2.

KW - confocal photoluminescence

KW - critical thickness

KW - GaSb

KW - transmission electron microscopy

KW - x-ray diffraction

KW - ZnTe

UR - http://www.scopus.com/inward/record.url?scp=84887130967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887130967&partnerID=8YFLogxK

U2 - 10.1007/s11664-013-2650-8

DO - 10.1007/s11664-013-2650-8

M3 - Article

AN - SCOPUS:84887130967

VL - 42

SP - 3090

EP - 3096

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 11

ER -