Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Xin Hao Zhao, Michael J. Dinezza, Shi Liu, Calli M. Campbell, Yuan Zhao, Yong-Hang Zhang

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38 Citations (Scopus)

Abstract

The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg0.24Cd0.76Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 102cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

Original languageEnglish (US)
Article number252101
JournalApplied Physics Letters
Volume105
Issue number25
DOIs
StatePublished - Dec 22 2014

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carrier lifetime
molecular beam epitaxy
photoluminescence
radiative lifetime
recycling
life (durability)
photons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy. / Zhao, Xin Hao; Dinezza, Michael J.; Liu, Shi; Campbell, Calli M.; Zhao, Yuan; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 105, No. 25, 252101, 22.12.2014.

Research output: Contribution to journalArticle

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