Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

Keun Yong Ban, Darius Kuciauskas, Stephen P. Bremnerand, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

InAs quantum dots (aDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of aD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages3306-3309
Number of pages4
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Valence bands
Photoluminescence
Chemical analysis
Semiconductor quantum dots
Surface active agents

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Ban, K. Y., Kuciauskas, D., Bremnerand, S. P., & Honsberg, C. (2010). Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3306-3309). [5617048] https://doi.org/10.1109/PVSC.2010.5617048

Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. / Ban, Keun Yong; Kuciauskas, Darius; Bremnerand, Stephen P.; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 3306-3309 5617048.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ban, KY, Kuciauskas, D, Bremnerand, SP & Honsberg, C 2010, Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5617048, pp. 3306-3309, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5617048
Ban KY, Kuciauskas D, Bremnerand SP, Honsberg C. Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 3306-3309. 5617048 https://doi.org/10.1109/PVSC.2010.5617048
Ban, Keun Yong ; Kuciauskas, Darius ; Bremnerand, Stephen P. ; Honsberg, Christiana. / Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 3306-3309
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