Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

Keun Yong Ban; Darius Kuciauskas; Stephen P. Bremnerand; Christiana Honsberg

doi:10.1109/PVSC.2010.5617048

Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

Keun Yong Ban, Darius Kuciauskas, Stephen P. Bremnerand, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

InAs quantum dots (aDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of aD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.

Original language	English (US)
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	3306-3309
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5617048
State	Published - Dec 20 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2010.5617048

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Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. / Ban, Keun Yong; Kuciauskas, Darius; Bremnerand, Stephen P. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 3306-3309 5617048 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ban, KY, Kuciauskas, D, Bremnerand, SP & Honsberg, C 2010, Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5617048, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3306-3309, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5617048

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abstract = "InAs quantum dots (aDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of aD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.",

author = "Ban, {Keun Yong} and Darius Kuciauskas and Bremnerand, {Stephen P.} and Christiana Honsberg",

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T1 - Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

AU - Ban, Keun Yong

AU - Kuciauskas, Darius

AU - Bremnerand, Stephen P.

AU - Honsberg, Christiana

PY - 2010/12/20

Y1 - 2010/12/20

N2 - InAs quantum dots (aDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of aD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.

AB - InAs quantum dots (aDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of aD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.

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Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

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