Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

Keun Yong Ban, Darius Kuciauskas, Stephen P. Bremnerand, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

InAs quantum dots (aDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of aD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages3306-3309
Number of pages4
DOIs
StatePublished - Dec 20 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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