Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

Research output: Contribution to journalConference article

42 Scopus citations

Abstract

The electronic properties of the threading dislocations in undoped GaN have been studied using electron holography. The electrostatic potential profiles show that edge, screw, and mixed dislocations are negatively charged. The line charge density at the dislocation core, defined by n electrons per unit cell along the c direction, is determined. The line charge densities for edge, screw, and mixed dislocations are ∼0.3, 1.0, and 0.6 e/c, respectively. The corresponding radii of the charged core are 15, 40 and 20 nm, respectively. A model for the charge distribution around dislocations is discussed.

Original languageEnglish (US)
Pages (from-to)407-411
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number2
DOIs
StatePublished - Aug 1 2002
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: Mar 11 2002Mar 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN'. Together they form a unique fingerprint.

  • Cite this