Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

J. Cai; Fernando Ponce

doi:10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M

Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

J. Cai, Fernando Ponce

Physics

Research output: Contribution to journal › Conference article › peer-review

47 Scopus citations

Abstract

The electronic properties of the threading dislocations in undoped GaN have been studied using electron holography. The electrostatic potential profiles show that edge, screw, and mixed dislocations are negatively charged. The line charge density at the dislocation core, defined by n electrons per unit cell along the c direction, is determined. The line charge densities for edge, screw, and mixed dislocations are ∼0.3, 1.0, and 0.6 e/c, respectively. The corresponding radii of the charged core are 15, 40 and 20 nm, respectively. A model for the charge distribution around dislocations is discussed.

Original language	English (US)
Pages (from-to)	407-411
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	192
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M
State	Published - Aug 1 2002
Event	4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain Duration: Mar 11 2002 → Mar 15 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M

Cite this

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title = "Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN",

abstract = "The electronic properties of the threading dislocations in undoped GaN have been studied using electron holography. The electrostatic potential profiles show that edge, screw, and mixed dislocations are negatively charged. The line charge density at the dislocation core, defined by n electrons per unit cell along the c direction, is determined. The line charge densities for edge, screw, and mixed dislocations are ∼0.3, 1.0, and 0.6 e/c, respectively. The corresponding radii of the charged core are 15, 40 and 20 nm, respectively. A model for the charge distribution around dislocations is discussed.",

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AU - Ponce, Fernando

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N2 - The electronic properties of the threading dislocations in undoped GaN have been studied using electron holography. The electrostatic potential profiles show that edge, screw, and mixed dislocations are negatively charged. The line charge density at the dislocation core, defined by n electrons per unit cell along the c direction, is determined. The line charge densities for edge, screw, and mixed dislocations are ∼0.3, 1.0, and 0.6 e/c, respectively. The corresponding radii of the charged core are 15, 40 and 20 nm, respectively. A model for the charge distribution around dislocations is discussed.

AB - The electronic properties of the threading dislocations in undoped GaN have been studied using electron holography. The electrostatic potential profiles show that edge, screw, and mixed dislocations are negatively charged. The line charge density at the dislocation core, defined by n electrons per unit cell along the c direction, is determined. The line charge densities for edge, screw, and mixed dislocations are ∼0.3, 1.0, and 0.6 e/c, respectively. The corresponding radii of the charged core are 15, 40 and 20 nm, respectively. A model for the charge distribution around dislocations is discussed.

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ER -

Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

Abstract

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