Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

J. B. Wang; D. Ding; Shane Johnson; S. Q. Yu; Yong-Hang Zhang

doi:10.1002/pssb.200675612

Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

J. B. Wang, D. Ding, Shane Johnson, S. Q. Yu, Yong-Hang Zhang

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39 Scopus citations

Abstract

The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.

Original language	English (US)
Pages (from-to)	2740-2751
Number of pages	12
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	8
DOIs	https://doi.org/10.1002/pssb.200675612
State	Published - Aug 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy",

abstract = "The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.",

author = "Wang, {J. B.} and D. Ding and Shane Johnson and Yu, {S. Q.} and Yong-Hang Zhang",

year = "2007",

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T1 - Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

AU - Wang, J. B.

AU - Ding, D.

AU - Johnson, Shane

AU - Yu, S. Q.

AU - Zhang, Yong-Hang

PY - 2007/8

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N2 - The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.

AB - The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.

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JF - Physica Status Solidi (B) Basic Research

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Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

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