Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

J. B. Wang, D. Ding, Shane Johnson, S. Q. Yu, Yong-Hang Zhang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.

Original languageEnglish (US)
Pages (from-to)2740-2751
Number of pages12
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number8
DOIs
StatePublished - Aug 2007

Fingerprint

Spontaneous emission
Quantum efficiency
Molecular beam epitaxy
spontaneous emission
aluminum gallium arsenides
Heterojunctions
quantum efficiency
Photoluminescence
molecular beam epitaxy
photoluminescence
Surface-Active Agents
Surface active agents
surfactants
Pumps
pumps
injection
Temperature
temperature dependence
Lasers
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.",
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T1 - Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

AU - Wang, J. B.

AU - Ding, D.

AU - Johnson, Shane

AU - Yu, S. Q.

AU - Zhang, Yong-Hang

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AB - The injection and temperature dependence of the spontaneous emission quantum efficiency of molecular beam epitaxy grown GaAs/AlGaAs heterostructures is determined using excitation dependent photoluminescence (PL) measurements. Two samples are compared; one grown with Sb as a surfactant and one grown without Sb. The PL measurements were performed at temperatures from 80 to 320 K using a HeNe pump laser with powers ranging from 0.6 to 35 mW. The quantum efficiency is inferred from the power law predicted by the rate equations that links pump power and integrated PL signal. The use of Sb as surfactant improved the extrapolated peak spontaneous emission quantum efficiency from 0.970 to 0.977 at 300 K and from 0.996 to 0.998 at 180 K.

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