Abstract

We demonstrate Si-Ge integration on engineered M2O 3/Si(1 1 1) (M = Gd,Er) dielectric buffer layers using non-traditional chemical precursors that provide new levels of functionality within the deposition process. Stoichiometric Si0.50Ge0.50 alloys and pure Si heterostructures are grown epitaxially via ultra-low-temperature chemical vapor deposition using SiH3GeH 3 and Si3H8/Si4H10, respectively. In the case of Si on Gd2O3, an optimal growth processing window in the range of 500-600 °C was found to yield planar layers with monocrystalline structures via a proposed coincidence lattice matching mechanism (2aSi-aGd2O3), while for the SiGe system (2% lattice mismatch) comparable quality films with fully relaxed strain states are deposited at a lower temperature range of 420-450 °C. Extension of this growth process to Si on Er2O3 yields remarkably high-quality layers in spite of the even larger ∼3% lattice mismatch. In all cases, the Si-Ge overlayers are found to primarily adopt an A-B-A epitaxial alignment with respect to the M2O3 buffered Si(1 1 1). A comparative study of the Si growth using Si3H8 and Si 4H10 indicates that both compounds provide an efficient and straightforward process for semiconductor growth on Gd2O 3/Si(1 1 1), which appears to be more viable than conventional approaches from the point of view of scalability and volume.

Original languageEnglish (US)
Article number125005
JournalSemiconductor Science and Technology
Volume26
Issue number12
DOIs
StatePublished - Dec 1 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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