Abstract

Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.

Original languageEnglish (US)
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
DOIs
StateAccepted/In press - Jun 1 2015

Fingerprint

Networks (circuits)
Aging of materials
MOSFET devices
Specifications
Degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Software

Cite this

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title = "Design-Time Reliability Enhancement Using Hotspot Identification for RF Circuits",
abstract = "Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.",
author = "Doohwang Chang and Jennifer Kitchen and Bertan Bakkaloglu and Sayfe Kiaei and Sule Ozev",
year = "2015",
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doi = "10.1109/TVLSI.2015.2428221",
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