Abstract

Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.

Original languageEnglish (US)
Article number7115168
Pages (from-to)1179-1183
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume24
Issue number3
DOIs
StatePublished - Mar 2016

Keywords

  • Electromigration (EM)
  • Hot-carrier injection (HCI)
  • Hotspot identification
  • Lifetime enhancement
  • Negative bias temperature instability (NBTI)
  • RF reliability

ASJC Scopus subject areas

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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