Design-time reliability enhancement using hotspot identification for RF circuits

Doohwang Chang; Jennifer Kitchen; Bertan Bakkaloglu; Sayfe Kiaei; Sule Ozev

doi:10.1109/TVLSI.2015.2428221

Design-time reliability enhancement using hotspot identification for RF circuits

Doohwang Chang, Jennifer Kitchen, Bertan Bakkaloglu, Sayfe Kiaei, Sule Ozev

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.

Original language	English (US)
Article number	7115168
Pages (from-to)	1179-1183
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	24
Issue number	3
DOIs	https://doi.org/10.1109/TVLSI.2015.2428221
State	Published - Mar 2016

Keywords

Electromigration (EM)
Hot-carrier injection (HCI)
Hotspot identification
Lifetime enhancement
Negative bias temperature instability (NBTI)
RF reliability

ASJC Scopus subject areas

Software
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/TVLSI.2015.2428221

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title = "Design-time reliability enhancement using hotspot identification for RF circuits",

abstract = "Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.",

keywords = "Electromigration (EM), Hot-carrier injection (HCI), Hotspot identification, Lifetime enhancement, Negative bias temperature instability (NBTI), RF reliability",

author = "Doohwang Chang and Jennifer Kitchen and Bertan Bakkaloglu and Sayfe Kiaei and Sule Ozev",

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year = "2016",

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AU - Chang, Doohwang

AU - Kitchen, Jennifer

AU - Bakkaloglu, Bertan

AU - Kiaei, Sayfe

AU - Ozev, Sule

PY - 2016/3

Y1 - 2016/3

N2 - Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.

AB - Failure due to aging mechanisms in CMOS devices is an important concern of RF circuits. Lifetime of analog/RF circuits is defined as the point where at least one specification will fail due to aging effects. In this brief, we present a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices and inductors at design time (presilicon). We identify reliability hotspots and concentrate on these circuit components to enhance the lifetime with low area and no performance impact.

KW - Electromigration (EM)

KW - Hot-carrier injection (HCI)

KW - Hotspot identification

KW - Lifetime enhancement

KW - Negative bias temperature instability (NBTI)

KW - RF reliability

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Design-time reliability enhancement using hotspot identification for RF circuits

Abstract

Keywords

ASJC Scopus subject areas

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