Abstract
This paper discusses the back-end-of-line (BEOL) layers for a 7 nm predictive process design kit (PDK). The rationale behind choosing a particular lithographic process - EUV lithography, self-aligned double patterning (SADP), and litho-etch litho-etch (LELE) - for different layers, in addition to some design rule values, is described. The rules are based on the literature and on design technology co-optimization (DTCO) evaluation of standard cell based designs and automated place-and-route experiments. Decomposition criteria and design rules to ensure conflict-free coloring of SADP metal topologies and manufacturable SADP photolithography masks are discussed in detail. Their efficacy is demonstrated through successful coloring and photolithography mask derivation for target metal shape layouts, which represent corner cases, by using the Mentor Graphics Calibre and multi-patterning tools. Edge placement errors, misalignment, and critical dimension uniformity are included in the analysis.
Original language | English (US) |
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Title of host publication | Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017 |
Publisher | IEEE Computer Society |
Pages | 149-154 |
Number of pages | 6 |
ISBN (Electronic) | 9781509054046 |
DOIs | |
State | Published - May 2 2017 |
Event | 18th International Symposium on Quality Electronic Design, ISQED 2017 - Santa Clara, United States Duration: Mar 14 2017 → Mar 15 2017 |
Other
Other | 18th International Symposium on Quality Electronic Design, ISQED 2017 |
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Country/Territory | United States |
City | Santa Clara |
Period | 3/14/17 → 3/15/17 |
Keywords
- Back end of line
- design rules
- EUV lithography
- LELE
- multi-patterning
- SADP
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality