Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process

E. Mikkola; H. G. Parks; B. Vermeire; H. Barnaby; D. Goodman

Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process

E. Mikkola, H. G. Parks, B. Vermeire, H. Barnaby, D. Goodman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The wear out or end-of-life region of an integrated circuit (IC) is a function of time, intensity of use, and environment. For microelectronic devices, the environment includes variables such as temperature, supply voltage, and incident ionizing radiation. The actual lifetime of an IC used in the field may be very different than the specified lifetime, which is measured under controlled and specified conditions, due to the different environment. Self-contained reliability prognostic cells are small monitor circuits included on a host circuit chip that inform the user that the host part is entering or is about to enter the end-of-life region, thereby predicting impending failure. This allows replacement of parts during planned maintenance cycles and reduces down time for critical applications. In this paper, two novel self-stressing prognostic cells that give advance warning of impending failure of their host integrated circuits due to total dose ionizing radiation are described. The functionality of the prognostic cells was verified with SPICE simulation using BSIM3 models for the 0.25 μm TSMC MOSIS process using a 2.5 V supply voltage. Each prognostic cell was found to trigger at the correct damage threshold level.

Original language	English (US)
Title of host publication	Proceedings of the IASTED International Conference on Circuits, Signals, and Systems
Editors	M.H. Rashid, M.H. Rashid
Pages	214-219
Number of pages	6
State	Published - Dec 1 2003
Externally published	Yes
Event	Proceedings of the IASTED International Conference on Circuits, Signals and Systems - Cancun, Mexico Duration: May 19 2003 → May 21 2003

Publication series

Name	Proceedings of the IASTED International Conference on Circuits, Signals, and Systems

Other

Other	Proceedings of the IASTED International Conference on Circuits, Signals and Systems
Country/Territory	Mexico
City	Cancun
Period	5/19/03 → 5/21/03

Keywords

Bulk CMOS
Design
Integrated Circuits
Layout
Prognostic Cells
Reliability
Simulation

ASJC Scopus subject areas

General Engineering

Cite this

Mikkola, E., Parks, H. G., Vermeire, B., Barnaby, H., & Goodman, D. (2003). Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process. In M. H. Rashid, & M. H. Rashid (Eds.), Proceedings of the IASTED International Conference on Circuits, Signals, and Systems (pp. 214-219). (Proceedings of the IASTED International Conference on Circuits, Signals, and Systems).

Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process. / Mikkola, E.; Parks, H. G.; Vermeire, B. et al.
Proceedings of the IASTED International Conference on Circuits, Signals, and Systems. ed. / M.H. Rashid; M.H. Rashid. 2003. p. 214-219 (Proceedings of the IASTED International Conference on Circuits, Signals, and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mikkola, E, Parks, HG, Vermeire, B, Barnaby, H & Goodman, D 2003, Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process. in MH Rashid & MH Rashid (eds), Proceedings of the IASTED International Conference on Circuits, Signals, and Systems. Proceedings of the IASTED International Conference on Circuits, Signals, and Systems, pp. 214-219, Proceedings of the IASTED International Conference on Circuits, Signals and Systems, Cancun, Mexico, 5/19/03.

Mikkola E, Parks HG, Vermeire B, Barnaby H, Goodman D. Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process. In Rashid MH, Rashid MH, editors, Proceedings of the IASTED International Conference on Circuits, Signals, and Systems. 2003. p. 214-219. (Proceedings of the IASTED International Conference on Circuits, Signals, and Systems).

Mikkola, E. ; Parks, H. G. ; Vermeire, B. et al. / Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process. Proceedings of the IASTED International Conference on Circuits, Signals, and Systems. editor / M.H. Rashid ; M.H. Rashid. 2003. pp. 214-219 (Proceedings of the IASTED International Conference on Circuits, Signals, and Systems).

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AB - The wear out or end-of-life region of an integrated circuit (IC) is a function of time, intensity of use, and environment. For microelectronic devices, the environment includes variables such as temperature, supply voltage, and incident ionizing radiation. The actual lifetime of an IC used in the field may be very different than the specified lifetime, which is measured under controlled and specified conditions, due to the different environment. Self-contained reliability prognostic cells are small monitor circuits included on a host circuit chip that inform the user that the host part is entering or is about to enter the end-of-life region, thereby predicting impending failure. This allows replacement of parts during planned maintenance cycles and reduces down time for critical applications. In this paper, two novel self-stressing prognostic cells that give advance warning of impending failure of their host integrated circuits due to total dose ionizing radiation are described. The functionality of the prognostic cells was verified with SPICE simulation using BSIM3 models for the 0.25 μm TSMC MOSIS process using a 2.5 V supply voltage. Each prognostic cell was found to trigger at the correct damage threshold level.

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Design, simulation and applicability of total dose ionizing radiation prognostic cells in a commercial 0.25μM process

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

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