Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs

Ickhyun Song; Seungwoo Jung; Nelson E. Lourenco; Uppili S. Raghunathan; Zachary E. Fleetwood; Saeed Zeinolabedinzadeh; Tikurete B. Gebremariam; Farzad Inanlou; Nicholas J.H. Roche; Ani Khachatrian; Dale McMorrow; Stephen P. Buchner; Joseph S. Melinger; Jeffrey H. Warner; Pauline Paki-Amouzou; John D. Cressler

doi:10.1109/TNS.2014.2363631

Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs

Ickhyun Song, Seungwoo Jung, Nelson E. Lourenco, Uppili S. Raghunathan, Zachary E. Fleetwood, Saeed Zeinolabedinzadeh, Tikurete B. Gebremariam, Farzad Inanlou, Nicholas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.

Original language	English (US)
Article number	6940327
Pages (from-to)	3218-3225
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2014.2363631
State	Published - Dec 1 2014
Externally published	Yes

Keywords

Cascode
inverse-mode
low-noise amplifier (LNA)
mixed-mode simulation
pulsed-laser
radiation-hardening-by-design (RHBD)
siGe HBT
single-event effect (SEE)
single-event transient (SET)
two photon absorption (TPA)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2014.2363631

Cite this

Song, I., Jung, S., Lourenco, N. E., Raghunathan, U. S., Fleetwood, Z. E., Zeinolabedinzadeh, S., Gebremariam, T. B., Inanlou, F., Roche, N. J. H., Khachatrian, A., McMorrow, D., Buchner, S. P., Melinger, J. S., Warner, J. H., Paki-Amouzou, P., & Cressler, J. D. (2014). Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs. IEEE Transactions on Nuclear Science, 61(6), 3218-3225. Article 6940327. https://doi.org/10.1109/TNS.2014.2363631

Song, I, Jung, S, Lourenco, NE, Raghunathan, US, Fleetwood, ZE, Zeinolabedinzadeh, S, Gebremariam, TB, Inanlou, F, Roche, NJH, Khachatrian, A, McMorrow, D, Buchner, SP, Melinger, JS, Warner, JH, Paki-Amouzou, P & Cressler, JD 2014, 'Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs', IEEE Transactions on Nuclear Science, vol. 61, no. 6, 6940327, pp. 3218-3225. https://doi.org/10.1109/TNS.2014.2363631

@article{a7a1a76a650145748976cd6d46fec992,

title = "Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs",

abstract = "A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.",

keywords = "Cascode, inverse-mode, low-noise amplifier (LNA), mixed-mode simulation, pulsed-laser, radiation-hardening-by-design (RHBD), siGe HBT, single-event effect (SEE), single-event transient (SET), two photon absorption (TPA)",

author = "Ickhyun Song and Seungwoo Jung and Lourenco, {Nelson E.} and Raghunathan, {Uppili S.} and Fleetwood, {Zachary E.} and Saeed Zeinolabedinzadeh and Gebremariam, {Tikurete B.} and Farzad Inanlou and Roche, {Nicholas J.H.} and Ani Khachatrian and Dale McMorrow and Buchner, {Stephen P.} and Melinger, {Joseph S.} and Warner, {Jeffrey H.} and Pauline Paki-Amouzou and Cressler, {John D.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/TNS.2014.2363631",

language = "English (US)",

volume = "61",

pages = "3218--3225",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs

AU - Song, Ickhyun

AU - Jung, Seungwoo

AU - Lourenco, Nelson E.

AU - Raghunathan, Uppili S.

AU - Fleetwood, Zachary E.

AU - Zeinolabedinzadeh, Saeed

AU - Gebremariam, Tikurete B.

AU - Inanlou, Farzad

AU - Roche, Nicholas J.H.

AU - Khachatrian, Ani

AU - McMorrow, Dale

AU - Buchner, Stephen P.

AU - Melinger, Joseph S.

AU - Warner, Jeffrey H.

AU - Paki-Amouzou, Pauline

AU - Cressler, John D.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.

AB - A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.

KW - Cascode

KW - inverse-mode

KW - low-noise amplifier (LNA)

KW - mixed-mode simulation

KW - pulsed-laser

KW - radiation-hardening-by-design (RHBD)

KW - siGe HBT

KW - single-event effect (SEE)

KW - single-event transient (SET)

KW - two photon absorption (TPA)

UR - http://www.scopus.com/inward/record.url?scp=84919917088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919917088&partnerID=8YFLogxK

U2 - 10.1109/TNS.2014.2363631

DO - 10.1109/TNS.2014.2363631

M3 - Article

AN - SCOPUS:84919917088

SN - 0018-9499

VL - 61

SP - 3218

EP - 3225

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

M1 - 6940327

ER -

Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this