Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs

Ickhyun Song, Seungwoo Jung, Nelson E. Lourenco, Uppili S. Raghunathan, Zachary E. Fleetwood, Saeed Zeinolabedinzadeh, Tikurete B. Gebremariam, Farzad Inanlou, Nicholas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.

Original languageEnglish (US)
Article number6940327
Pages (from-to)3218-3225
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014
Externally publishedYes

Fingerprint

Low noise amplifiers
Heterojunction bipolar transistors
low noise
amplifiers
Radiation
radiation
circuit diagrams
Schematic diagrams
Laser modes
Pulsed lasers
pulsed lasers
Transistors
transistors
Photons
platforms
wafers
photons
configurations
simulation
Experiments

Keywords

  • Cascode
  • inverse-mode
  • low-noise amplifier (LNA)
  • mixed-mode simulation
  • pulsed-laser
  • radiation-hardening-by-design (RHBD)
  • siGe HBT
  • single-event effect (SEE)
  • single-event transient (SET)
  • two photon absorption (TPA)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Song, I., Jung, S., Lourenco, N. E., Raghunathan, U. S., Fleetwood, Z. E., Zeinolabedinzadeh, S., ... Cressler, J. D. (2014). Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs. IEEE Transactions on Nuclear Science, 61(6), 3218-3225. [6940327]. https://doi.org/10.1109/TNS.2014.2363631

Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs. / Song, Ickhyun; Jung, Seungwoo; Lourenco, Nelson E.; Raghunathan, Uppili S.; Fleetwood, Zachary E.; Zeinolabedinzadeh, Saeed; Gebremariam, Tikurete B.; Inanlou, Farzad; Roche, Nicholas J.H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

In: IEEE Transactions on Nuclear Science, Vol. 61, No. 6, 6940327, 01.12.2014, p. 3218-3225.

Research output: Contribution to journalArticle

Song, I, Jung, S, Lourenco, NE, Raghunathan, US, Fleetwood, ZE, Zeinolabedinzadeh, S, Gebremariam, TB, Inanlou, F, Roche, NJH, Khachatrian, A, McMorrow, D, Buchner, SP, Melinger, JS, Warner, JH, Paki-Amouzou, P & Cressler, JD 2014, 'Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs', IEEE Transactions on Nuclear Science, vol. 61, no. 6, 6940327, pp. 3218-3225. https://doi.org/10.1109/TNS.2014.2363631
Song, Ickhyun ; Jung, Seungwoo ; Lourenco, Nelson E. ; Raghunathan, Uppili S. ; Fleetwood, Zachary E. ; Zeinolabedinzadeh, Saeed ; Gebremariam, Tikurete B. ; Inanlou, Farzad ; Roche, Nicholas J.H. ; Khachatrian, Ani ; McMorrow, Dale ; Buchner, Stephen P. ; Melinger, Joseph S. ; Warner, Jeffrey H. ; Paki-Amouzou, Pauline ; Cressler, John D. / Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs. In: IEEE Transactions on Nuclear Science. 2014 ; Vol. 61, No. 6. pp. 3218-3225.
@article{a7a1a76a650145748976cd6d46fec992,
title = "Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs",
abstract = "A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.",
keywords = "Cascode, inverse-mode, low-noise amplifier (LNA), mixed-mode simulation, pulsed-laser, radiation-hardening-by-design (RHBD), siGe HBT, single-event effect (SEE), single-event transient (SET), two photon absorption (TPA)",
author = "Ickhyun Song and Seungwoo Jung and Lourenco, {Nelson E.} and Raghunathan, {Uppili S.} and Fleetwood, {Zachary E.} and Saeed Zeinolabedinzadeh and Gebremariam, {Tikurete B.} and Farzad Inanlou and Roche, {Nicholas J.H.} and Ani Khachatrian and Dale McMorrow and Buchner, {Stephen P.} and Melinger, {Joseph S.} and Warner, {Jeffrey H.} and Pauline Paki-Amouzou and Cressler, {John D.}",
year = "2014",
month = "12",
day = "1",
doi = "10.1109/TNS.2014.2363631",
language = "English (US)",
volume = "61",
pages = "3218--3225",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs

AU - Song, Ickhyun

AU - Jung, Seungwoo

AU - Lourenco, Nelson E.

AU - Raghunathan, Uppili S.

AU - Fleetwood, Zachary E.

AU - Zeinolabedinzadeh, Saeed

AU - Gebremariam, Tikurete B.

AU - Inanlou, Farzad

AU - Roche, Nicholas J.H.

AU - Khachatrian, Ani

AU - McMorrow, Dale

AU - Buchner, Stephen P.

AU - Melinger, Joseph S.

AU - Warner, Jeffrey H.

AU - Paki-Amouzou, Pauline

AU - Cressler, John D.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.

AB - A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a cascode core. This new cascode configuration exhibits reduced transient peaks and shorter transient durations compared to the conventional cascode one. The improved SET response was verified with through-wafer two-photon absorption pulsed-laser experiments and supported via mixed-mode TCAD simulations. In addition, analysis of the RF performance and the reliability issues associated with the inverse-mode operation further suggests this new cascode structure can be a strong contender for space-based applications. The LNA with the inverse-mode-based cascode core was fabricated in a 130 nm SiGe BiCMOS platform and has similar RF performance to the conventional schematic-based LNA, further validating the proposed approach.

KW - Cascode

KW - inverse-mode

KW - low-noise amplifier (LNA)

KW - mixed-mode simulation

KW - pulsed-laser

KW - radiation-hardening-by-design (RHBD)

KW - siGe HBT

KW - single-event effect (SEE)

KW - single-event transient (SET)

KW - two photon absorption (TPA)

UR - http://www.scopus.com/inward/record.url?scp=84919917088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919917088&partnerID=8YFLogxK

U2 - 10.1109/TNS.2014.2363631

DO - 10.1109/TNS.2014.2363631

M3 - Article

AN - SCOPUS:84919917088

VL - 61

SP - 3218

EP - 3225

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

M1 - 6940327

ER -