Design of GeSiSn/Ge quantum cascase laser

G. Sun, J. B. Khurgin, Jose Menendez, R. A. Soref

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We design a lattice-matched Ge/Ge0.76Si0.19Sn 0.05 quantum cascade laser emitting at 49 μm. This particular alloy composition gives a "clean" conduction band offset of 150meV at L-valleys with all other energy valleys sitting higher in energy.

Original languageEnglish (US)
Title of host publication2008 5th International Conference on Group IV Photonics, GFP
Pages273-275
Number of pages3
DOIs
StatePublished - Nov 21 2008
Event2008 5th International Conference on Group IV Photonics, GFP - Sorrento, Italy
Duration: Sep 17 2008Sep 19 2008

Publication series

Name2008 5th International Conference on Group IV Photonics, GFP

Other

Other2008 5th International Conference on Group IV Photonics, GFP
CountryItaly
CitySorrento
Period9/17/089/19/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Sun, G., Khurgin, J. B., Menendez, J., & Soref, R. A. (2008). Design of GeSiSn/Ge quantum cascase laser. In 2008 5th International Conference on Group IV Photonics, GFP (pp. 273-275). [4638170] (2008 5th International Conference on Group IV Photonics, GFP). https://doi.org/10.1109/GROUP4.2008.4638170