Design guidelines of current source gate driver for series connected SiC MOSFETs

Chunhui Liu, Zhengda Zhang, Yifu Liu, Yunpeng Si, Mengzhi Wang, Qin Lei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The series connection of low voltage devices is one option of forming a device with higher voltage rating. The biggest challenge of series connected devices is drain-source voltage unequal sharing caused by differences among each device. A current source gate driver for series connected SiC MOSFETs is demonstrated in previous work. The proposed current source gate driver can generate highly synchronized gate voltages because of its constant gate current and novel gate driver structure. But in previous work, the design considerations are not explained in detail. This paper will provide detailed design guidelines of each stage in terms of control strategy and hardware.

Original languageEnglish (US)
Title of host publicationECCE 2020 - IEEE Energy Conversion Congress and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3803-3810
Number of pages8
ISBN (Electronic)9781728158266
DOIs
StatePublished - Oct 11 2020
Event12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020 - Virtual, Detroit, United States
Duration: Oct 11 2020Oct 15 2020

Publication series

NameECCE 2020 - IEEE Energy Conversion Congress and Exposition

Conference

Conference12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020
Country/TerritoryUnited States
CityVirtual, Detroit
Period10/11/2010/15/20

Keywords

  • current source gate driver
  • series connection
  • SiC MOSFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Control and Optimization
  • Energy Engineering and Power Technology

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