Design, growth, fabrication and characterization of high-band GAP InGaN/GaN solar cells

Omkar Jani, Christiana Honsberg, Yong Huang, June O. Song, Ian Ferguson, Gon Namkoong, Elaissa Trybus, Alan Doolittle, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Scopus citations

Abstract

One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions varying from 0 to 40% is grown by both metal-organic, chemical-vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and studied for suitability in photovoltaic applications. Structural characterization is done using X-ray diffraction, while optical properties are measured using photoluminescence and absorption-transmission measurements. These material properties are used to design various configurations of solar cells in PC1D. Solar cells are grown and fabricated using methods derived from the III-N LED and photodetector technologies. The fabricated solar cells have open-circuit voltages around 2.4 V and internal quantum efficiencies as high as 60%. Major loss mechanisms in these devices are identified and methods to further improve efficiencies are discussed.

Original languageEnglish (US)
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages20-25
Number of pages6
ISBN (Print)1424400163, 9781424400164
DOIs
StatePublished - Jan 1 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

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ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Jani, O., Honsberg, C., Huang, Y., Song, J. O., Ferguson, I., Namkoong, G., Trybus, E., Doolittle, A., & Kurtz, S. (2006). Design, growth, fabrication and characterization of high-band GAP InGaN/GaN solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 20-25). [4059552] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279337