Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter

Chunhui Liu, Qin Lei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

SiC device has supreme switching performance over Si device which helps to shrink the power converter filter size and improve the converter power density. In pulse power supply area, without the tight thermal dissipation limitations, higher voltage and higher frequency can be achieved. In this paper, a 1000V/1.5MHz 80kVA pulse power inverter is developed. Its design considerations and performance in such voltage and frequency level are discussed.

Original languageEnglish (US)
Title of host publication2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6641-6645
Number of pages5
ISBN (Electronic)9781479973118
DOIs
StatePublished - Dec 3 2018
Event10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States
Duration: Sep 23 2018Sep 27 2018

Other

Other10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
CountryUnited States
CityPortland
Period9/23/189/27/18

Keywords

  • High power density
  • Mega-Hertz frequency
  • SiC MOSFET

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Control and Optimization
  • Computer Networks and Communications
  • Hardware and Architecture
  • Information Systems and Management

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