Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter

Chunhui Liu; Qin Lei

doi:10.1109/ECCE.2018.8557359

Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter

Chunhui Liu, Qin Lei

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

SiC device has supreme switching performance over Si device which helps to shrink the power converter filter size and improve the converter power density. In pulse power supply area, without the tight thermal dissipation limitations, higher voltage and higher frequency can be achieved. In this paper, a 1000V/1.5MHz 80kVA pulse power inverter is developed. Its design considerations and performance in such voltage and frequency level are discussed.

Original language	English (US)
Title of host publication	2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	6641-6645
Number of pages	5
ISBN (Electronic)	9781479973118
DOIs	https://doi.org/10.1109/ECCE.2018.8557359
State	Published - Dec 3 2018
Event	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States Duration: Sep 23 2018 → Sep 27 2018

Publication series

Name	2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

Other

Other	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
Country/Territory	United States
City	Portland
Period	9/23/18 → 9/27/18

Keywords

High power density
Mega-Hertz frequency
SiC MOSFET

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Control and Optimization
Computer Networks and Communications
Hardware and Architecture
Information Systems and Management

Access to Document

10.1109/ECCE.2018.8557359

Cite this

Liu, C., & Lei, Q. (2018). Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter. In 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018 (pp. 6641-6645). [8557359] (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2018.8557359

Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter. / Liu, Chunhui; Lei, Qin.

2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 6641-6645 8557359 (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, C & Lei, Q 2018, Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter. in 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018., 8557359, 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 6641-6645, 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018, Portland, United States, 9/23/18. https://doi.org/10.1109/ECCE.2018.8557359

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author = "Chunhui Liu and Qin Lei",

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AB - SiC device has supreme switching performance over Si device which helps to shrink the power converter filter size and improve the converter power density. In pulse power supply area, without the tight thermal dissipation limitations, higher voltage and higher frequency can be achieved. In this paper, a 1000V/1.5MHz 80kVA pulse power inverter is developed. Its design considerations and performance in such voltage and frequency level are discussed.

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Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter

Abstract

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Keywords

ASJC Scopus subject areas

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