Design applications of compact MOSFET model for extended temperature range (60-400K)

Z. Zhu; A. Kathuria; S. G. Krishna; M. Mojarradi; B. Jalali-Farahani; Hugh Barnaby; W. Wu; G. Gildenblat

doi:10.1049/el.2010.3468

Design applications of compact MOSFET model for extended temperature range (60-400K)

Z. Zhu, A. Kathuria, S. G. Krishna, M. Mojarradi, B. Jalali-Farahani, Hugh Barnaby, W. Wu, G. Gildenblat

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.

Original language	English (US)
Pages (from-to)	141-142
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	2
DOIs	https://doi.org/10.1049/el.2010.3468
State	Published - Jan 20 2011

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2010.3468

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abstract = "An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.",

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AU - Jalali-Farahani, B.

AU - Barnaby, Hugh

AU - Wu, W.

AU - Gildenblat, G.

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AB - An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.

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Design applications of compact MOSFET model for extended temperature range (60-400K)

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