Design applications of compact MOSFET model for extended temperature range (60-400K)

Z. Zhu, A. Kathuria, S. G. Krishna, M. Mojarradi, B. Jalali-Farahani, Hugh Barnaby, W. Wu, G. Gildenblat

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.

Original languageEnglish (US)
Pages (from-to)141-142
Number of pages2
JournalElectronics Letters
Volume47
Issue number2
DOIs
StatePublished - Jan 20 2011

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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