Design applications of compact MOSFET model for extended temperature range (60-400K)

Z. Zhu, A. Kathuria, S. G. Krishna, M. Mojarradi, B. Jalali-Farahani, Hugh Barnaby, W. Wu, G. Gildenblat

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.

Original languageEnglish (US)
Pages (from-to)141-142
Number of pages2
JournalElectronics Letters
Volume47
Issue number2
DOIs
StatePublished - Jan 20 2011

Fingerprint

Temperature
Capacitors
Simulators
Networks (circuits)
Industry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zhu, Z., Kathuria, A., Krishna, S. G., Mojarradi, M., Jalali-Farahani, B., Barnaby, H., ... Gildenblat, G. (2011). Design applications of compact MOSFET model for extended temperature range (60-400K). Electronics Letters, 47(2), 141-142. https://doi.org/10.1049/el.2010.3468

Design applications of compact MOSFET model for extended temperature range (60-400K). / Zhu, Z.; Kathuria, A.; Krishna, S. G.; Mojarradi, M.; Jalali-Farahani, B.; Barnaby, Hugh; Wu, W.; Gildenblat, G.

In: Electronics Letters, Vol. 47, No. 2, 20.01.2011, p. 141-142.

Research output: Contribution to journalArticle

Zhu, Z, Kathuria, A, Krishna, SG, Mojarradi, M, Jalali-Farahani, B, Barnaby, H, Wu, W & Gildenblat, G 2011, 'Design applications of compact MOSFET model for extended temperature range (60-400K)', Electronics Letters, vol. 47, no. 2, pp. 141-142. https://doi.org/10.1049/el.2010.3468
Zhu Z, Kathuria A, Krishna SG, Mojarradi M, Jalali-Farahani B, Barnaby H et al. Design applications of compact MOSFET model for extended temperature range (60-400K). Electronics Letters. 2011 Jan 20;47(2):141-142. https://doi.org/10.1049/el.2010.3468
Zhu, Z. ; Kathuria, A. ; Krishna, S. G. ; Mojarradi, M. ; Jalali-Farahani, B. ; Barnaby, Hugh ; Wu, W. ; Gildenblat, G. / Design applications of compact MOSFET model for extended temperature range (60-400K). In: Electronics Letters. 2011 ; Vol. 47, No. 2. pp. 141-142.
@article{d165fd84c33b4508a30b565ca8a0e692,
title = "Design applications of compact MOSFET model for extended temperature range (60-400K)",
abstract = "An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.",
author = "Z. Zhu and A. Kathuria and Krishna, {S. G.} and M. Mojarradi and B. Jalali-Farahani and Hugh Barnaby and W. Wu and G. Gildenblat",
year = "2011",
month = "1",
day = "20",
doi = "10.1049/el.2010.3468",
language = "English (US)",
volume = "47",
pages = "141--142",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "2",

}

TY - JOUR

T1 - Design applications of compact MOSFET model for extended temperature range (60-400K)

AU - Zhu, Z.

AU - Kathuria, A.

AU - Krishna, S. G.

AU - Mojarradi, M.

AU - Jalali-Farahani, B.

AU - Barnaby, Hugh

AU - Wu, W.

AU - Gildenblat, G.

PY - 2011/1/20

Y1 - 2011/1/20

N2 - An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.

AB - An advanced MOSFET model for the 60-400K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.

UR - http://www.scopus.com/inward/record.url?scp=78751672589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751672589&partnerID=8YFLogxK

U2 - 10.1049/el.2010.3468

DO - 10.1049/el.2010.3468

M3 - Article

AN - SCOPUS:78751672589

VL - 47

SP - 141

EP - 142

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -