Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

Balakrishnam R. Jampana; Andrew G. Melton; Muhammad Jamil; Nikolai N. Faleev; Robert L. Opila; Ian T. Ferguson; Christiana Honsberg

doi:10.1109/LED.2009.2034280

Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

Balakrishnam R. Jampana, Andrew G. Melton, Muhammad Jamil, Nikolai N. Faleev, Robert L. Opila, Ian T. Ferguson, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm² are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

Original language	English (US)
Article number	5338010
Pages (from-to)	32-34
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	1
DOIs	https://doi.org/10.1109/LED.2009.2034280
State	Published - Jan 2010

Keywords

Fabrication
InGaN solar cell
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2034280

Cite this

@article{2dd80c754a34467bb7e4470153ccebc8,

title = "Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell",

abstract = "The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.",

keywords = "Fabrication, InGaN solar cell, Solar cell",

author = "Jampana, {Balakrishnam R.} and Melton, {Andrew G.} and Muhammad Jamil and Faleev, {Nikolai N.} and Opila, {Robert L.} and Ferguson, {Ian T.} and Christiana Honsberg",

year = "2010",

month = jan,

doi = "10.1109/LED.2009.2034280",

language = "English (US)",

volume = "31",

pages = "32--34",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

AU - Jampana, Balakrishnam R.

AU - Melton, Andrew G.

AU - Jamil, Muhammad

AU - Faleev, Nikolai N.

AU - Opila, Robert L.

AU - Ferguson, Ian T.

AU - Honsberg, Christiana

PY - 2010/1

Y1 - 2010/1

N2 - The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

AB - The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

KW - Fabrication

KW - InGaN solar cell

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=72949122558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72949122558&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2034280

DO - 10.1109/LED.2009.2034280

M3 - Article

AN - SCOPUS:72949122558

SN - 0741-3106

VL - 31

SP - 32

EP - 34

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 5338010

ER -

Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this