Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

Balakrishnam R. Jampana, Andrew G. Melton, Muhammad Jamil, Nikolai N. Faleev, Robert L. Opila, Ian T. Ferguson, Christiana Honsberg

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

Original languageEnglish (US)
Article number5338010
Pages (from-to)32-34
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number1
DOIs
StatePublished - Jan 2010

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Solar cells
Energy gap
Epilayers
Indium
Open circuit voltage
Short circuit currents
Photoluminescence
Current density
Lighting
Crystalline materials
X ray diffraction
Defects
Chemical analysis

Keywords

  • Fabrication
  • InGaN solar cell
  • Solar cell

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Jampana, B. R., Melton, A. G., Jamil, M., Faleev, N. N., Opila, R. L., Ferguson, I. T., & Honsberg, C. (2010). Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell. IEEE Electron Device Letters, 31(1), 32-34. [5338010]. https://doi.org/10.1109/LED.2009.2034280

Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell. / Jampana, Balakrishnam R.; Melton, Andrew G.; Jamil, Muhammad; Faleev, Nikolai N.; Opila, Robert L.; Ferguson, Ian T.; Honsberg, Christiana.

In: IEEE Electron Device Letters, Vol. 31, No. 1, 5338010, 01.2010, p. 32-34.

Research output: Contribution to journalArticle

Jampana, BR, Melton, AG, Jamil, M, Faleev, NN, Opila, RL, Ferguson, IT & Honsberg, C 2010, 'Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell', IEEE Electron Device Letters, vol. 31, no. 1, 5338010, pp. 32-34. https://doi.org/10.1109/LED.2009.2034280
Jampana BR, Melton AG, Jamil M, Faleev NN, Opila RL, Ferguson IT et al. Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell. IEEE Electron Device Letters. 2010 Jan;31(1):32-34. 5338010. https://doi.org/10.1109/LED.2009.2034280
Jampana, Balakrishnam R. ; Melton, Andrew G. ; Jamil, Muhammad ; Faleev, Nikolai N. ; Opila, Robert L. ; Ferguson, Ian T. ; Honsberg, Christiana. / Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 1. pp. 32-34.
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AU - Opila, Robert L.

AU - Ferguson, Ian T.

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