Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell

Balakrishnam R. Jampana, Andrew G. Melton, Muhammad Jamil, Nikolai N. Faleev, Robert L. Opila, Ian T. Ferguson, Christiana Honsberg

Research output: Contribution to journalArticle

61 Scopus citations

Abstract

The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

Original languageEnglish (US)
Article number5338010
Pages (from-to)32-34
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number1
DOIs
StatePublished - Jan 1 2010

Keywords

  • Fabrication
  • InGaN solar cell
  • Solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Jampana, B. R., Melton, A. G., Jamil, M., Faleev, N. N., Opila, R. L., Ferguson, I. T., & Honsberg, C. (2010). Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell. IEEE Electron Device Letters, 31(1), 32-34. [5338010]. https://doi.org/10.1109/LED.2009.2034280