We propose and demonstrate a design and fabrication of an electrical injection metallic bowtie (MB) structure integrated with semiconductor gain medium. Our integrated bowtie-semiconductor structure takes the advantage of selective wet chemical etching of InGaAsP, allowing the formation of a bowtie shaped gain structure by a single step etching. The subsequent metal deposition allows the nature integration of gain medium between two bowtie tips. Electroluminescence was observed from fabricated structures at 78 K. Such gain embedded MB structures open the potential for large scale fabrication of plasmonic structures for various applications such as nanolasers and plasmonic generation under electrical injection.

Original languageEnglish (US)
Article number091112
JournalApplied Physics Letters
Issue number9
Publication statusPublished - Aug 26 2013


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this