Design and characterization of GaNInGaN solar cells

Omkar Jani; Ian Ferguson; Christiana Honsberg; Sarah Kurtz

doi:10.1063/1.2793180

Design and characterization of GaNInGaN solar cells

Omkar Jani, Ian Ferguson, Christiana Honsberg, Sarah Kurtz

Research output: Contribution to journal › Article › peer-review

538 Scopus citations

Abstract

We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.

Original language	English (US)
Article number	132117
Journal	Applied Physics Letters
Volume	91
Issue number	13
DOIs	https://doi.org/10.1063/1.2793180
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2793180

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title = "Design and characterization of GaNInGaN solar cells",

abstract = "We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.",

author = "Omkar Jani and Ian Ferguson and Christiana Honsberg and Sarah Kurtz",

note = "Funding Information: This work was partially funded by DARPA/ARO Agreement No.: W911NF-05-9-0005. This work was also supported by U.S. D.O.E. and the National Renewable Energy Laboratories, monitored by Dr. Robert McConnell and Dr. Martha Symko-Davies, and the Office of Naval Research, monitored by Dr. Colin Wood. ",

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doi = "10.1063/1.2793180",

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T1 - Design and characterization of GaNInGaN solar cells

AU - Jani, Omkar

AU - Ferguson, Ian

AU - Honsberg, Christiana

AU - Kurtz, Sarah

N1 - Funding Information: This work was partially funded by DARPA/ARO Agreement No.: W911NF-05-9-0005. This work was also supported by U.S. D.O.E. and the National Renewable Energy Laboratories, monitored by Dr. Robert McConnell and Dr. Martha Symko-Davies, and the Office of Naval Research, monitored by Dr. Colin Wood.

PY - 2007

Y1 - 2007

N2 - We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.

AB - We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.

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Design and characterization of GaNInGaN solar cells

Abstract

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