Design and characterization of GaNInGaN solar cells

Omkar Jani, Ian Ferguson, Christiana Honsberg, Sarah Kurtz

Research output: Contribution to journalArticle

476 Citations (Scopus)

Abstract

We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.

Original languageEnglish (US)
Article number132117
JournalApplied Physics Letters
Volume91
Issue number13
DOIs
StatePublished - 2007
Externally publishedYes

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solar cells
nitrides
contact resistance
open circuit voltage
metalorganic chemical vapor deposition
quantum efficiency
x ray diffraction
computer programs
photoluminescence
defects
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Design and characterization of GaNInGaN solar cells. / Jani, Omkar; Ferguson, Ian; Honsberg, Christiana; Kurtz, Sarah.

In: Applied Physics Letters, Vol. 91, No. 13, 132117, 2007.

Research output: Contribution to journalArticle

Jani, Omkar ; Ferguson, Ian ; Honsberg, Christiana ; Kurtz, Sarah. / Design and characterization of GaNInGaN solar cells. In: Applied Physics Letters. 2007 ; Vol. 91, No. 13.
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