TY - JOUR
T1 - Design and Analysis of Energy-Efficient and Reliable 3-D ReRAM Cross-Point Array System
AU - Mao, Manqing
AU - Yu, Shimeng
AU - Chakrabarti, Chaitali
N1 - Funding Information:
Manuscript received October 17, 2017; revised January 25, 2018; accepted February 25, 2018. Date of publication March 29, 2018; date of current version June 26, 2018. This work was supported by NSF-CNS under Grant 1615774. (Corresponding author: Manqing Mao.) The authors are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: manqing.mao@asu.edu; shimeng.yu@asu.edu; chaitali@asu.edu).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/7
Y1 - 2018/7
N2 - In this paper, we study the energy, performance, and reliability of 3-D horizontal 1-selector-1-resistor (1S1R) cross-point resistive random access memory (ReRAM) systems. We present access schemes which activate multiple subarrays with multiple layers in a subarray to achieve high energy efficiency through activating fewer subarray and good reliability through innovative data organization. We propose two low-cost access schemes [namely, multilayer access scheme (MAS)-I and MAS-II] which enable multilayer programming but differ in the number of activated layers (NL) and hence differ in energy efficiency. To improve reliability, we propose to distribute data across subarrays as well as along the layers of a subarray such that the error characteristics of all accessed data lines are the same. At the system level, we use Bose-Chaudhuri-Hocquenghem (BCH) codes with different strengths so that all competing systems have the same reliability. We show that for a 1-GB 3-D horizontal 1S1R ReRAM system with an I/O width of 64 bits, the NB = 16, NL = 4 system based on MAS-I that utilizes BCH t = 6 code consumes the lowest energy with 33% lower energy consumption compared to the baseline system where only one layer is activated at a time.
AB - In this paper, we study the energy, performance, and reliability of 3-D horizontal 1-selector-1-resistor (1S1R) cross-point resistive random access memory (ReRAM) systems. We present access schemes which activate multiple subarrays with multiple layers in a subarray to achieve high energy efficiency through activating fewer subarray and good reliability through innovative data organization. We propose two low-cost access schemes [namely, multilayer access scheme (MAS)-I and MAS-II] which enable multilayer programming but differ in the number of activated layers (NL) and hence differ in energy efficiency. To improve reliability, we propose to distribute data across subarrays as well as along the layers of a subarray such that the error characteristics of all accessed data lines are the same. At the system level, we use Bose-Chaudhuri-Hocquenghem (BCH) codes with different strengths so that all competing systems have the same reliability. We show that for a 1-GB 3-D horizontal 1S1R ReRAM system with an I/O width of 64 bits, the NB = 16, NL = 4 system based on MAS-I that utilizes BCH t = 6 code consumes the lowest energy with 33% lower energy consumption compared to the baseline system where only one layer is activated at a time.
KW - 1-selector-1-resistor (1S1R) 3-D resistive random access memory (ReRAM)
KW - energy
KW - multibit access
KW - multilayer scheme
KW - reliability
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U2 - 10.1109/TVLSI.2018.2814544
DO - 10.1109/TVLSI.2018.2814544
M3 - Article
AN - SCOPUS:85044782227
SN - 1063-8210
VL - 26
SP - 1290
EP - 1300
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 7
ER -