Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

T. M. Levin, G. H. Jessen, Fernando Ponce, L. J. Brillson

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Abstract

We have measured the energies, relative intensities, and spatial distribution of deep level defect transitions near GaN/InGaN/GaN quantum well structures using low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy. Results obtained with electron excitation energies as low as 100 eV provide evidence on an incremental, 10-20 nm scale for defects within the GaN confinement layer, their variation with distance from the quantum well, and their electronic quality relative to the GaN substrate. The InGaN quantum well and GaN near-band-edge luminescence intensities exhibit strong variations as a function of excitation depth. Combined with a model of energy-dependent penetration, diffusion, and recombination, these variations indicate a value of 25-28 nm for the minority carrier diffusion length within the GaN confinement layer. Depth-dependent spectra also reveal the presence of cubic GaN phase formation at the InGaN/GaN substrate interface of a relatively In-rich quantum well structure. The contrast in LEEN features between structures of two different InGaN quantum well compositions demonstrates the effect of erowth composition on local state formation.

Original languageEnglish (US)
Pages (from-to)2545-2552
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number6
StatePublished - 1999

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Semiconductor quantum wells
Luminescence
quantum wells
Spectroscopy
luminescence
Defects
Electrons
defects
spectroscopy
electrons
electron energy
Excitation energy
Substrates
diffusion length
minority carriers
Chemical analysis
Spatial distribution
excitation
energy
spatial distribution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

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title = "Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells",
abstract = "We have measured the energies, relative intensities, and spatial distribution of deep level defect transitions near GaN/InGaN/GaN quantum well structures using low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy. Results obtained with electron excitation energies as low as 100 eV provide evidence on an incremental, 10-20 nm scale for defects within the GaN confinement layer, their variation with distance from the quantum well, and their electronic quality relative to the GaN substrate. The InGaN quantum well and GaN near-band-edge luminescence intensities exhibit strong variations as a function of excitation depth. Combined with a model of energy-dependent penetration, diffusion, and recombination, these variations indicate a value of 25-28 nm for the minority carrier diffusion length within the GaN confinement layer. Depth-dependent spectra also reveal the presence of cubic GaN phase formation at the InGaN/GaN substrate interface of a relatively In-rich quantum well structure. The contrast in LEEN features between structures of two different InGaN quantum well compositions demonstrates the effect of erowth composition on local state formation.",
author = "Levin, {T. M.} and Jessen, {G. H.} and Fernando Ponce and Brillson, {L. J.}",
year = "1999",
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TY - JOUR

T1 - Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

AU - Levin, T. M.

AU - Jessen, G. H.

AU - Ponce, Fernando

AU - Brillson, L. J.

PY - 1999

Y1 - 1999

N2 - We have measured the energies, relative intensities, and spatial distribution of deep level defect transitions near GaN/InGaN/GaN quantum well structures using low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy. Results obtained with electron excitation energies as low as 100 eV provide evidence on an incremental, 10-20 nm scale for defects within the GaN confinement layer, their variation with distance from the quantum well, and their electronic quality relative to the GaN substrate. The InGaN quantum well and GaN near-band-edge luminescence intensities exhibit strong variations as a function of excitation depth. Combined with a model of energy-dependent penetration, diffusion, and recombination, these variations indicate a value of 25-28 nm for the minority carrier diffusion length within the GaN confinement layer. Depth-dependent spectra also reveal the presence of cubic GaN phase formation at the InGaN/GaN substrate interface of a relatively In-rich quantum well structure. The contrast in LEEN features between structures of two different InGaN quantum well compositions demonstrates the effect of erowth composition on local state formation.

AB - We have measured the energies, relative intensities, and spatial distribution of deep level defect transitions near GaN/InGaN/GaN quantum well structures using low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy. Results obtained with electron excitation energies as low as 100 eV provide evidence on an incremental, 10-20 nm scale for defects within the GaN confinement layer, their variation with distance from the quantum well, and their electronic quality relative to the GaN substrate. The InGaN quantum well and GaN near-band-edge luminescence intensities exhibit strong variations as a function of excitation depth. Combined with a model of energy-dependent penetration, diffusion, and recombination, these variations indicate a value of 25-28 nm for the minority carrier diffusion length within the GaN confinement layer. Depth-dependent spectra also reveal the presence of cubic GaN phase formation at the InGaN/GaN substrate interface of a relatively In-rich quantum well structure. The contrast in LEEN features between structures of two different InGaN quantum well compositions demonstrates the effect of erowth composition on local state formation.

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SN - 1071-1023

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