Depth profile detection limit of 3×1015 atom cm -3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry

Peter Williams, Charles A. Evans

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi- species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm -3 (50 ppb) during a depth profile of a 250-μm square area.

Original languageEnglish (US)
Pages (from-to)559-561
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number11
DOIs
StatePublished - Dec 1 1977
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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