Depth profile detection limit of 3×1015 atom cm -3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry

Peter Williams; Charles A. Evans

doi:10.1063/1.89259

Depth profile detection limit of 3×10¹⁵ atom cm ^-3 for As in Si using Cs⁺ bombardment negative secondary ion mass spectrometry

Peter Williams, Charles A. Evans

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi^- species, produced in high yield by Cs⁺ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×10¹⁵ atom cm ^-3 (50 ppb) during a depth profile of a 250-μm square area.

Original language	English (US)
Pages (from-to)	559-561
Number of pages	3
Journal	Applied Physics Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1063/1.89259
State	Published - 1977
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.89259

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title = "Depth profile detection limit of 3×1015 atom cm -3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry",

abstract = "Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi- species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm -3 (50 ppb) during a depth profile of a 250-μm square area.",

author = "Peter Williams and Evans, {Charles A.}",

year = "1977",

doi = "10.1063/1.89259",

language = "English (US)",

volume = "30",

pages = "559--561",

journal = "Applied Physics Letters",

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AU - Williams, Peter

AU - Evans, Charles A.

PY - 1977

Y1 - 1977

N2 - Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi- species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm -3 (50 ppb) during a depth profile of a 250-μm square area.

AB - Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi- species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm -3 (50 ppb) during a depth profile of a 250-μm square area.

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JF - Applied Physics Letters

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Depth profile detection limit of 3×10¹⁵ atom cm ^-3 for As in Si using Cs⁺ bombardment negative secondary ion mass spectrometry

Abstract

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