Depth profile detection limit of 3×1015 atom cm -3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry

Peter Williams, Charles A. Evans

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi- species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm -3 (50 ppb) during a depth profile of a 250-μm square area.

Original languageEnglish (US)
Pages (from-to)559-561
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number11
DOIs
StatePublished - 1977
Externally publishedYes

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secondary ion mass spectrometry
bombardment
profiles
atoms
silicon
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Depth profile detection limit of 3×1015 atom cm -3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry. / Williams, Peter; Evans, Charles A.

In: Applied Physics Letters, Vol. 30, No. 11, 1977, p. 559-561.

Research output: Contribution to journalArticle

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