Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition

G. Lucovsky, Cheng Wang, Robert Nemanich, M. J. Williams

Research output: Contribution to journalArticle

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Abstract

This paper describes properties of microcrystalline silicon (μc-Si), and microcrystalline silicon-carbon (μc-SiC) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of μc-Si and μc-SiC thin films; (ii) the characterization and properties of the intrinsic and doped μc-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped μc-SiC thin film materials; and (iv) the application of remote PECVD μc-Si and μc-SiC thin films in device structures.

Original languageEnglish (US)
Pages (from-to)419-434
Number of pages16
JournalSolar Cells
Volume30
Issue number1-4
DOIs
StatePublished - 1991
Externally publishedYes

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Plasma enhanced chemical vapor deposition
Thin films
Microcrystalline silicon
Carbon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition. / Lucovsky, G.; Wang, Cheng; Nemanich, Robert; Williams, M. J.

In: Solar Cells, Vol. 30, No. 1-4, 1991, p. 419-434.

Research output: Contribution to journalArticle

Lucovsky, G. ; Wang, Cheng ; Nemanich, Robert ; Williams, M. J. / Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition. In: Solar Cells. 1991 ; Vol. 30, No. 1-4. pp. 419-434.
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