Abstract
This paper describes properties of microcrystalline silicon (μc-Si), and microcrystalline silicon-carbon (μc-SiC) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of μc-Si and μc-SiC thin films; (ii) the characterization and properties of the intrinsic and doped μc-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped μc-SiC thin film materials; and (iv) the application of remote PECVD μc-Si and μc-SiC thin films in device structures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 419-434 |
| Number of pages | 16 |
| Journal | Solar Cells |
| Volume | 30 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - May 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Engineering