Abstract
The RPECVD process has been extended to deposit a-Si,C:H and μc-Si,C:H. The degree of crystallinity in the μc-Si,C:H alloys is lower than in μc-Si:H films deposited under comparable conditions. Attempts to dope μc-Si,C:H alloys indicate that high levels of both B and P doping can promote a transition from μc-Si,C:H to a-Si,C:H. Raman spectra indicate that crystallites in the μc-Si,C:H alloys are Si, while IR measurements show that the amorphous component is an a-Si,C:H alloy.
Original language | English (US) |
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Pages (from-to) | 741-744 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 137-138 |
Issue number | PART 2 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry