Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process - RPECVD

C. Wang, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The RPECVD process has been extended to deposit a-Si,C:H and μc-Si,C:H. The degree of crystallinity in the μc-Si,C:H alloys is lower than in μc-Si:H films deposited under comparable conditions. Attempts to dope μc-Si,C:H alloys indicate that high levels of both B and P doping can promote a transition from μc-Si,C:H to a-Si,C:H. Raman spectra indicate that crystallites in the μc-Si,C:H alloys are Si, while IR measurements show that the amorphous component is an a-Si,C:H alloy.

Original languageEnglish (US)
Pages (from-to)741-744
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 2
DOIs
StatePublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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