TY - JOUR
T1 - Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process - RPECVD
AU - Wang, C.
AU - Lucovsky, G.
AU - Nemanich, R. J.
N1 - Funding Information:
ACKNOWLEDGEMENT This work has been supported by SERI, ONR and NSF. The authors acknowledge Ms. B.L. Bernhard and Dr. Y.L. Chen for the Raman spectra and TEM measurements, respectively.
PY - 1991
Y1 - 1991
N2 - The RPECVD process has been extended to deposit a-Si,C:H and μc-Si,C:H. The degree of crystallinity in the μc-Si,C:H alloys is lower than in μc-Si:H films deposited under comparable conditions. Attempts to dope μc-Si,C:H alloys indicate that high levels of both B and P doping can promote a transition from μc-Si,C:H to a-Si,C:H. Raman spectra indicate that crystallites in the μc-Si,C:H alloys are Si, while IR measurements show that the amorphous component is an a-Si,C:H alloy.
AB - The RPECVD process has been extended to deposit a-Si,C:H and μc-Si,C:H. The degree of crystallinity in the μc-Si,C:H alloys is lower than in μc-Si:H films deposited under comparable conditions. Attempts to dope μc-Si,C:H alloys indicate that high levels of both B and P doping can promote a transition from μc-Si,C:H to a-Si,C:H. Raman spectra indicate that crystallites in the μc-Si,C:H alloys are Si, while IR measurements show that the amorphous component is an a-Si,C:H alloy.
UR - http://www.scopus.com/inward/record.url?scp=0040635313&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0040635313&partnerID=8YFLogxK
U2 - 10.1016/S0022-3093(05)80227-3
DO - 10.1016/S0022-3093(05)80227-3
M3 - Article
AN - SCOPUS:0040635313
VL - 137-138
SP - 741
EP - 744
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - PART 2
ER -