Dependence of the C49-C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation

Hyeongtag Jeon, Gangjoong Yoon, Robert Nemanich

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The C49 to C54 phase transition and the surface and interface morphologies were examined for titanium silicides formed on atomically clean Si substrates. The properties were explored as a function of the Ti film thickness, deposition temperature and Si substrate orientation. Ti films of thicknesses between 5 nm and 40 nm were deposited at elevated temperatures from 500°C to 900°C in increments of 100°C onto Si(100) and Si(111) wafers. The titanium silicides are analyzed with X-ray diffraction, Raman, scanning and transmission electron microscopy for phase identification and measurement of the surface and interface morphologies. The C49 to C54 TiSi2 phase transition is observed to occur between 600°C and 700°C for the thickest films on (100) wafers, but the transition temperature is observed to increase as the film thickness is decreased or for films formed on Si(111) substrates. For a 20 nm Ti film deposited onto Si(100), the transition temperature occurs between 600°C and 700°C. However, for the same thickness of Ti on Si(111), the transition temperature is found between 700°C and 800°C. This retardation of the phase transition is discussed in terms of surface and volume free-energy considerations.

Original languageEnglish (US)
Pages (from-to)178-182
Number of pages5
JournalThin Solid Films
Volume299
Issue number1-2
StatePublished - May 15 1997
Externally publishedYes

Fingerprint

Superconducting transition temperature
Film thickness
Silicides
film thickness
silicides
Phase transitions
transition temperature
Titanium
Substrates
titanium
wafers
Thick films
Free energy
thick films
free energy
Transmission electron microscopy
X ray diffraction
Temperature
transmission electron microscopy
Scanning electron microscopy

Keywords

  • Phase transition
  • Silicon
  • Titanium silicide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Dependence of the C49-C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation. / Jeon, Hyeongtag; Yoon, Gangjoong; Nemanich, Robert.

In: Thin Solid Films, Vol. 299, No. 1-2, 15.05.1997, p. 178-182.

Research output: Contribution to journalArticle

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