Abstract
The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
| Original language | English (US) |
|---|---|
| Article number | 7929388 |
| Pages (from-to) | 1549-1553 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 64 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1 2017 |
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Keywords
- Bipolar junction transistor (BJT)
- electron irradiation
- ideality factor
- interface traps
- radiation effects
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
Cite this
Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration. / Li, Xingji; Yang, Jianqun; Barnaby, Hugh; Galloway, Kenneth F.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Liu, Chaoming.
In: IEEE Transactions on Nuclear Science, Vol. 64, No. 6, 7929388, 01.06.2017, p. 1549-1553.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration
AU - Li, Xingji
AU - Yang, Jianqun
AU - Barnaby, Hugh
AU - Galloway, Kenneth F.
AU - Schrimpf, Ronald D.
AU - Fleetwood, Daniel M.
AU - Liu, Chaoming
PY - 2017/6/1
Y1 - 2017/6/1
N2 - The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
AB - The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
KW - Bipolar junction transistor (BJT)
KW - electron irradiation
KW - ideality factor
KW - interface traps
KW - radiation effects
UR - http://www.scopus.com/inward/record.url?scp=85022190144&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85022190144&partnerID=8YFLogxK
U2 - 10.1109/TNS.2017.2703310
DO - 10.1109/TNS.2017.2703310
M3 - Article
VL - 64
SP - 1549
EP - 1553
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6
M1 - 7929388
ER -