TY - JOUR
T1 - Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration
AU - Li, Xingji
AU - Yang, Jianqun
AU - Barnaby, Hugh
AU - Galloway, Kenneth F.
AU - Schrimpf, Ronald D.
AU - Fleetwood, Daniel M.
AU - Liu, Chaoming
N1 - Funding Information:
This work was supported in part by the National Natural Science Foundation of China under Grant 11575049 and Grant 61404038, in part by the Fundamental Research Funds for the Central Universities under Grant HIT. NSRIF. 2015001, and in part by the Fundamental Research Funds for State Key Laboratory of Intense Pulsed Radiation Field Simulation and Effect under Grant SKLIPR1414.
Publisher Copyright:
© 2016 IEEE.
PY - 2017/6
Y1 - 2017/6
N2 - The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
AB - The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
KW - Bipolar junction transistor (BJT)
KW - electron irradiation
KW - ideality factor
KW - interface traps
KW - radiation effects
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U2 - 10.1109/TNS.2017.2703310
DO - 10.1109/TNS.2017.2703310
M3 - Article
AN - SCOPUS:85022190144
VL - 64
SP - 1549
EP - 1553
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6
M1 - 7929388
ER -