Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

Xingji Li; Jianqun Yang; Hugh Barnaby; Kenneth F. Galloway; Ronald D. Schrimpf; Daniel M. Fleetwood; Chaoming Liu

doi:10.1109/TNS.2017.2703310

Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

Xingji Li, Jianqun Yang, Hugh Barnaby, Kenneth F. Galloway, Ronald D. Schrimpf, Daniel M. Fleetwood, Chaoming Liu

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The influence of surface carrier concentration on the ideality factor of excess base current (Δ I_B) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔI_B in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (V_EB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.

Original language	English (US)
Article number	7929388
Pages (from-to)	1549-1553
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2017.2703310
State	Published - Jun 1 2017

Keywords

Bipolar junction transistor (BJT)
electron irradiation
ideality factor
interface traps
radiation effects

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration. / Li, Xingji; Yang, Jianqun; Barnaby, Hugh; Galloway, Kenneth F.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Liu, Chaoming.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 6, 7929388, 01.06.2017, p. 1549-1553.

Research output: Contribution to journal › Article › peer-review

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