Abstract
The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.
Original language | English (US) |
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Article number | 7929388 |
Pages (from-to) | 1549-1553 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 64 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1 2017 |
Keywords
- Bipolar junction transistor (BJT)
- electron irradiation
- ideality factor
- interface traps
- radiation effects
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering