Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

Xingji Li; Jianqun Yang; Hugh Barnaby; Kenneth F. Galloway; Ronald D. Schrimpf; Daniel M. Fleetwood; Chaoming Liu

doi:10.1109/TNS.2017.2703310

Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

Xingji Li, Jianqun Yang, Hugh Barnaby, Kenneth F. Galloway, Ronald D. Schrimpf, Daniel M. Fleetwood, Chaoming Liu

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

The influence of surface carrier concentration on the ideality factor of excess base current (Δ I_B) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔI_B in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (V_EB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.

Original language	English (US)
Article number	7929388
Pages (from-to)	1549-1553
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2017.2703310
State	Published - Jun 1 2017

Fingerprint

Keywords

Bipolar junction transistor (BJT)
electron irradiation
ideality factor
interface traps
radiation effects

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

Li, X., Yang, J., Barnaby, H., Galloway, K. F., Schrimpf, R. D., Fleetwood, D. M., & Liu, C. (2017). Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration. IEEE Transactions on Nuclear Science, 64(6), 1549-1553. [7929388]. https://doi.org/10.1109/TNS.2017.2703310

@article{2f37a459f5a641a4b23c4998a270e6a1,

title = "Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration",

abstract = "The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.",

keywords = "Bipolar junction transistor (BJT), electron irradiation, ideality factor, interface traps, radiation effects",

author = "Xingji Li and Jianqun Yang and Hugh Barnaby and Galloway, {Kenneth F.} and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Chaoming Liu",

year = "2017",

month = jun,

day = "1",

doi = "10.1109/TNS.2017.2703310",

language = "English (US)",

volume = "64",

pages = "1549--1553",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

AU - Li, Xingji

AU - Yang, Jianqun

AU - Barnaby, Hugh

AU - Galloway, Kenneth F.

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - Liu, Chaoming

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.

AB - The influence of surface carrier concentration on the ideality factor of excess base current (Δ IB) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV electrons is investigated. ΔIB in LPNP BJTs is impacted by the surface carrier density and radiation-induced interface traps. In GLPNP BJTs, the surface carrier concentration can be controlled by the voltage applied to a gate over the base region. The ideality factor changes after irradiation, and its dependence on emitter-base voltage (VEB) is a function of gate voltage. For the irradiated devices, as the gate voltage decreases from +20 to -5 V, the ideality factor for excess base current changes from a single slope to two-slope behavior. The majority carrier concentration at the surface of the base, controlled by the gate voltage, impacts the excess base current and its ideality factor.

KW - Bipolar junction transistor (BJT)

KW - electron irradiation

KW - ideality factor

KW - interface traps

KW - radiation effects

UR - http://www.scopus.com/inward/record.url?scp=85022190144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85022190144&partnerID=8YFLogxK

U2 - 10.1109/TNS.2017.2703310

DO - 10.1109/TNS.2017.2703310

M3 - Article

AN - SCOPUS:85022190144

VL - 64

SP - 1549

EP - 1553

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

M1 - 7929388

ER -

Access to Document

10.1109/TNS.2017.2703310