Dependence of giant magnetoresistance on grain size in Co/Cu multilayers

A. R. Modak, David Smith, S. S P Parkin

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The effect of grain size on the magnetoresistance (MR) of Co/Cu multilayers fabricated by dc magnetron sputtering has been studied using Co/Cu multilayers grown with identical Co and Cu thicknesses but different grain sizes. These multilayers were selectively fabricated by growing with and without a Cu underlayer: grain-to-grain epitaxy from the buffer layer to the superlattice in the former facilitated control of the multilayer grain structure. The MR was found to increase with increasing grain size, with the difference being larger at low temperature. The enhancement of MR is attributed to an increased electron mean free path leading to sampling of more antiferromagnetically coupled layers.

Original languageEnglish (US)
Pages (from-to)4232-4235
Number of pages4
JournalPhysical Review B
Volume50
Issue number6
DOIs
StatePublished - 1994

Fingerprint

Giant magnetoresistance
Multilayers
Magnetoresistance
grain size
mean free path
epitaxy
Crystal microstructure
magnetron sputtering
Buffer layers
buffers
sampling
Epitaxial growth
Magnetron sputtering
augmentation
Sampling
Electrons
electrons
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dependence of giant magnetoresistance on grain size in Co/Cu multilayers. / Modak, A. R.; Smith, David; Parkin, S. S P.

In: Physical Review B, Vol. 50, No. 6, 1994, p. 4232-4235.

Research output: Contribution to journalArticle

Modak, A. R. ; Smith, David ; Parkin, S. S P. / Dependence of giant magnetoresistance on grain size in Co/Cu multilayers. In: Physical Review B. 1994 ; Vol. 50, No. 6. pp. 4232-4235.
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